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Longer titles found: P–n junction isolation (view)

searching for P–n junction 52 found (202 total)

Isamu Akasaki (2,860 words) [view diff] exact match in snippet view article find links to article

laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as

Kurt Lehovec (413 words) [view diff] exact match in snippet view article find links to article

innovated the concept of p-n junction isolation used in every circuit element with a guard ring: a reverse-biased p-n junction surrounding the planar periphery

Charles Fritts (324 words) [view diff] no match in snippet view article find links to article

practical for power uses after Russell Ohl's 1941 development of silicon P/N junction cells that reached efficiencies above 5% by the 1950s/1960s. By 2006

Electron-hole droplets (187 words) [view diff] exact match in snippet view article find links to article

created with intense optical excitation or electronic excitation in a p-n junction. Evidence for electron-hole droplets was first observed by J. R. Haynes

JIS semiconductor designation (198 words) [view diff] exact match in snippet view article find links to article

JIS-C-7012 for semiconductor part numbers. The first digit denotes the p-n junction count ("3" may also denote a dual-gate FET); then follows the letter

Tunnel field-effect transistor (1,203 words) [view diff] exact match in snippet view article find links to article

investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control was, however, not related

1989 in science (602 words) [view diff] exact match in snippet view article find links to article

Force, first flies. Isamu Akasaki produces the first Gallium nitride p-n junction blue/UV light-emitting diode. Nobel Prizes Physics – Norman F. Ramsey

Boron phosphide (368 words) [view diff] case mismatch in snippet view article find links to article

Science & Technology. ISBN 0-444-72006-5. US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production

TRIAC (3,487 words) [view diff] exact match in snippet view article find links to article

from the gate to MT1 through the p-silicon without passing through the p-n junction between the base and the emitter of the equivalent NPN transistor. This

Thermodynamic efficiency limit (648 words) [view diff] case mismatch in snippet view article find links to article

William; Queisser, Hans J. (1961). "Detailed Balance Limit of Efficiency of p-n Junction Solar Cells". Journal of Applied Physics. 32 (3). The American Institute

Explorer 15 (1,122 words) [view diff] exact match in snippet view article find links to article

1963, after which no further data were obtained. Six diffused silicon p-n junction semiconductor diodes were used to measure the energy spectrum of electrons

Hiroshi Amano (1,210 words) [view diff] no match in snippet view article find links to article

diodes. In 1989, he succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the

JEDEC (957 words) [view diff] exact match in snippet view article find links to article

rectifier". The first RMA digit thus was re-allocated from "heater power" to "p-n junction count" to form the new EIA/JEDEC EIA-370 standard; for example, the 1N4001

Antimony telluride (630 words) [view diff] exact match in snippet view article find links to article

; Grützmacher, Detlev (2015). "Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures". Nature Communications.

Carbon nanotubes in photovoltaics (4,718 words) [view diff] exact match in snippet view article find links to article

wall carbon nanotube (SWNT) diodes. Individual SWNTs can form ideal p-n junction diodes. An ideal behavior is the theoretical limit of performance for

Tungsten disulfide (1,865 words) [view diff] case mismatch in snippet view article find links to article

PMID 25695374. Yu Y, Fong PW, Wang S, Surya C (2016). "Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer". Scientific Reports. 6: 37833

Tungsten disulfide (1,865 words) [view diff] case mismatch in snippet view article find links to article

PMID 25695374. Yu Y, Fong PW, Wang S, Surya C (2016). "Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer". Scientific Reports. 6: 37833

Ohm's law (6,074 words) [view diff] exact match in snippet view article find links to article

voltage (their I–V curve) is nonlinear (or non-ohmic). An example is the p–n junction diode (curve at right). As seen in the figure, the current does not increase

Flat band potential (659 words) [view diff] no match in snippet view article find links to article

layer at the junction between a semiconductor and an electrolyte or p-n-junction. This is a consequence of the condition that the redox Fermi level of

Photoinduced electron transfer (448 words) [view diff] no match in snippet view article find links to article

delivery of the electron to a lower energy conductor attached to the p/n junction or into an electron transport chain. In this case some of the energy

Current–voltage characteristic (1,162 words) [view diff] case mismatch in snippet view article find links to article

resistor with large resistance, a resistor with small resistance, a P–N junction diode, and a battery with nonzero internal resistance. The horizontal

Aluminium gallium indium phosphide (672 words) [view diff] exact match in snippet view article find links to article

needed] A diode laser consists of a semiconductor material in which a p-n junction forms the active medium and optical feedback is typically provided by

Integrated circuit design (3,430 words) [view diff] exact match in snippet view article find links to article

active region of the individual components. The two common methods are p-n junction isolation and dielectric isolation. Attention must be given to power

James R. Biard (7,208 words) [view diff] exact match in snippet view article find links to article

demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically isolated semiconductor photodetector

Solar panel (9,091 words) [view diff] exact match in snippet view article find links to article

irradiance G in the plane of the module. However, the temperature T of the p–n junction also influences the main electrical parameters: the short circuit current

Gallium nitride (3,877 words) [view diff] exact match in snippet view article find links to article

temperatures. Such high-quality GaN led to the discovery of p-type GaN, p–n junction blue/UV-LEDs and room-temperature stimulated emission (essential for

Zinc oxide (9,267 words) [view diff] exact match in snippet view article find links to article

be produced with ZnO. As field-effect transistors, they do not need a p–n junction, thus avoiding the p-type doping problem of ZnO. Some of the field-effect

Hans-Joachim Queisser (518 words) [view diff] case mismatch in snippet view article find links to article

Shockley and Hans J. Queisser, "Detailed Balance Limit of Efficiency of p-n Junction Solar Cells", Journal of Applied Physics, Volume 32 (March 1961), pp

Ion implantation (4,211 words) [view diff] exact match in snippet view article find links to article

transistors. Ion implantation was developed as a method of producing the p-n junction of photovoltaic devices in the late 1970s and early 1980s, along with

Timeline of solar cells (4,963 words) [view diff] case mismatch in snippet view article find links to article

M. Chapin; C. S. Fuller & G. L. Pearson (May 1954). "A New Silicon p-n Junction Photocell for Converting Solar Radiation into Electrical Power". Journal

Synthetic diamond (10,213 words) [view diff] exact match in snippet view article find links to article

turn synthetic diamond into p-type or n-type semiconductor. Making a p–n junction by sequential doping of synthetic diamond with boron and phosphorus produces

Patna Collegiate School (573 words) [view diff] exact match in snippet view article find links to article

laboratories. The physics laboratory is equipped with all modern apparatus like p-n junction diode, zener diode, transistors, LED, Phone transistor & important ingredients

William Gardner Pfann (857 words) [view diff] exact match in snippet view article find links to article

toward the hottest spot. He says this method was used to "make complex p-n junction shapes for special transistors". He observes the motion of brine on sea

Crystalline silicon (4,960 words) [view diff] case mismatch in snippet view article find links to article

org. D. M. Chapin-C. S. Fuller-G. L. Pearson (1954). "A New Silicon p–n Junction Photocell for Converting Solar Radiation into Electrical Power". Journal

Growth of photovoltaics (4,784 words) [view diff] case mismatch in snippet view article find links to article

org. D. M. Chapin-C. S. Fuller-G. L. Pearson (1954). "A New Silicon p–n Junction Photocell for Converting Solar Radiation into Electrical Power". Journal

Carl Wagner (1,267 words) [view diff] case mismatch in snippet view article find links to article

William (1949). "The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors". Bell System Technical Journal. 28 (3): 435–489. doi:10

Nanowire (6,796 words) [view diff] exact match in snippet view article find links to article

(2005-05-23). "Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells" (PDF). Journal of Applied Physics. 97 (11): 114302–114302–11

Silicon-tin (1,009 words) [view diff] exact match in snippet view article find links to article

band gap associated with the diffusion of tin using homogeneous, abrupt p-n junction diodes. SiSn can be obtained experimentally using several approaches

Optical rectenna (3,660 words) [view diff] exact match in snippet view article find links to article

junction capacitance (also known as parasitic capacitance) found in p-n junction diodes and Schottky diodes, which can only operate effectively at frequencies

Cadmium telluride photovoltaics (6,070 words) [view diff] case mismatch in snippet view article find links to article

Vodakov; G. A. Lomakina; G. P. Naumov; Y. P. Maslakovets (1960). "A P-N Junction photocell made of CdTe". Soviet Physics - Solid State. 2 (1): 1. R. Colman

Electrons and Holes in Semiconductors with Applications to Transistor Electronics (365 words) [view diff] case mismatch in snippet view article find links to article

William (1949). "The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors". Bell System Technical Journal. 28 (3): 435–489. doi:10

Kagoshima Prefectural Konan High School (1,227 words) [view diff] exact match in snippet view article find links to article

engineer and physicist, inventor of the bright gallium nitride (GaN) p-n junction blue LED, Nobel Prize in Physics, Charles Stark Draper Prize, Queen Elizabeth

Traitorous eight (5,025 words) [view diff] exact match in snippet view article find links to article

Lojek 2007, pp. 68, 86: For example, the field-effect transistor with a p-n junction proposed by Shockley ideally suited for DC modulators was produced by

Neutron detection (8,642 words) [view diff] exact match in snippet view article find links to article

boron-based films are often grown upon n-type Si substrates, which can form a p–n junction with the Si and, therefore, produce a coated Si diode as described at

Sources of electrical energy (1,445 words) [view diff] exact match in snippet view article find links to article

producing electrical energy. A solar cell is formed by a light-sensitive p-n junction semiconductor, which when exposed to sunlight is excited to conduction

List of University of Southern California people (20,430 words) [view diff] exact match in snippet view article find links to article

consequences Jerome Lawrence – playwright Kurt Lehovec – creator of the p-n junction isolation technique in integrated circuits Jerry Lewis Hao Li – professor

Lazarus effect (1,198 words) [view diff] exact match in snippet view article find links to article

(2003-11-21). "The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles". Nuclear Instruments and

André Taylor (1,053 words) [view diff] exact match in snippet view article find links to article

2012). "Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells". Nano Letters. 13 (1): 95–99. doi:10.1021/NL3035652. ISSN 1530-6984

DRTE Computer (2,729 words) [view diff] case mismatch in snippet view article find links to article

a key component of all computer systems. Moody's design used a P-N-P-N junction, consisting of a PNP and NPN transistor connected back-to-back. Most

History of science and technology in Japan (22,859 words) [view diff] case mismatch in snippet view article find links to article

device". Google Patents. Esaki, L.; Kurose, Y.; Suzuki, T. (1957). "Ge P–N Junction のInternal Field Emission". 日本物理学会年会講演予稿集 (Abstracts of the Annual Meeting

RF chain (7,031 words) [view diff] exact match in snippet view article find links to article

Microwaves may be point contact diodes, Schottky diodes, Gallium Arsenide or p-n junction devices. Of these, Schottky diodes and junction diodes require biassing

Differential Hall Effect Metrology (2,919 words) [view diff] exact match in snippet view article find links to article

as is the case with buried-oxide (BOX) semiconductors, or it can be a p-n junction, which will naturally have a depleted region at the electrical junction