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Longer titles found: Gallium nitride nanotube (view), Indium gallium nitride (view), Aluminium gallium nitride (view)

searching for Gallium nitride 40 found (214 total)

Hiroshi Amano (1,205 words) [view diff] exact match in snippet view article find links to article

National Academy of Engineering in 2016 for the development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs. Amano was born in Hamamatsu

Monolithic microwave integrated circuit (430 words) [view diff] exact match in snippet view article find links to article

transistors than conventional Si devices but with similar cost advantages. Gallium nitride (GaN) is also an option for MMICs. Because GaN transistors can operate

Aerogalnite (498 words) [view diff] case mismatch in snippet view article find links to article

Aerogalnite (Aero-Gallium Nitride, Aero-GaN, AGaN) is a synthetic material consisting of networks of GaN interconnected microtubes. Due to the fact that

Martin D. Dawson (1,093 words) [view diff] exact match in snippet view article find links to article

operation of such lasers. In 1996 he foresaw of the importance of gallium nitride (GaN) micro-LEDs, which are now attracting huge worldwide interest

Steven P. DenBaars (1,285 words) [view diff] exact match in snippet view article find links to article

National Academy of Engineering (NAE) in 2012 for contributions to gallium nitride-based materials and devices for solid state lighting and displays.

Department of Materials Science and Metallurgy, University of Cambridge (797 words) [view diff] case mismatch in snippet view article find links to article

Device Materials Group Electron Microscopy Group Cambridge Centre for Gallium Nitride Hybrid Materials Group Macromolecular Materials Laboratory Centre for

Junqiao Wu (373 words) [view diff] exact match in snippet view article find links to article

semiconductors has led to major discoveries in the field, such as indium gallium nitride alloys have bandgaps spanning the entire near infrared to ultraviolet

Alex Lidow (658 words) [view diff] exact match in snippet view article find links to article

2007, an American technology company that designs and manufactures gallium nitride (GaN) semiconductors, which it sells to electronics designers and manufacturers

NAS Award for the Industrial Application of Science (279 words) [view diff] exact match in snippet view article find links to article

his pioneering discoveries, synthesis and commercial development of Gallium nitride LEDs and their use in sustainable solid-state light sources" Robert

Fujitsu A64FX (785 words) [view diff] no match in snippet view article find links to article

Retrieved 28 June 2020. "Fujitsu Successfully Triples the Power Output of Gallium-Nitride Transistors - Fujitsu Global". www.fujitsu.com. Fujitsu. Retrieved

Theodore Moustakas (986 words) [view diff] exact match in snippet view article find links to article

The patent in question is titled Highly insulating monocrystalline gallium nitride thin films (US5686738A), and was filed in 1995 and granted in 1997

Tomás Palacios (engineer) (1,228 words) [view diff] case mismatch in snippet view article

Graphene Devices and 2D Systems. "MIT/MTL Gallium Nitride (GaN) Energy Initiative". MIT/MTL Gallium Nitride (GaN) Energy Initiative (MIT-GaN). "Cornell

PROBA-V (1,123 words) [view diff] case mismatch in snippet view article find links to article

PROBA-V secondary instruments Objective Gallium Nitride based X-band power amplifier space qualification of new hardware Energetic particle telescope

Georges Destriau (404 words) [view diff] case mismatch in snippet view article find links to article

Wiley, 1973, S. 2. C. D. Munasinghe: Optimization of Rare Earth Doped Gallium Nitride Electroluminescent Devices for Flat Panel Display Applications. PhD-Thesis

MILMEGA (369 words) [view diff] exact match in snippet view article find links to article

transistor technologies, specifically, silicon carbide transistor (SiC) and gallium nitride transistor (GaN) technologies. In 2010, the company centralized its

Thermal management (electronics) (3,931 words) [view diff] exact match in snippet view article

high thermal conductivity and high thermal boundary conductance with gallium nitride transistors and thus better performance than diamond and silicon carbide

LED display (1,576 words) [view diff] case mismatch in snippet view article find links to article

the development of the blue (and later green) LED based on Indium Gallium Nitride, that possibilities opened for big LED video displays. The entire idea

Kagoshima Prefectural Konan High School (1,262 words) [view diff] exact match in snippet view article find links to article

America Isamu Akasaki - engineer and physicist, inventor of the bright gallium nitride (GaN) p-n junction blue LED, Nobel prize in Physics, Charles Stark

Inorganic imide (1,675 words) [view diff] case mismatch in snippet view article find links to article

1996). "Gallium Imide, {Ga(NH) 3/2 } n , a New Polymeric Precursor for Gallium Nitride Powders". Chemistry of Materials. 8 (12): 2708–2711. doi:10.1021/cm960419h

Kyoto Prize in Advanced Technology (557 words) [view diff] case mismatch in snippet view article find links to article

liquid crystals 2009 Isamu Akasaki Japan born 1929 Pioneering Work on Gallium Nitride p-n Junctions and Related Contributions to the Development of Blue

Boon Ooi (638 words) [view diff] case mismatch in snippet view article find links to article

matrix". In Morkoç, Hadis; Fujioka, Hiroshi; Schwarz, Ulrich T. (eds.). Gallium Nitride Materials and Devices XVI. Vol. 11686. SPIE. p. 1168610. Bibcode:2021SPIE11686E

Sumitomo Electric Industries (1,770 words) [view diff] exact match in snippet view article find links to article

Electric succeeded in developing and mass-producing the world's first gallium nitride substances. Sumitomo Electric also continues to be the leading manufacturer

Electronics and semiconductor manufacturing industry in India (9,260 words) [view diff] exact match in snippet view article find links to article

proposed to be extended around the existing facility for producing gallium nitride transistors, at the IISc's Centre for Nano Science and Engineering

Arthur Frank Witulski (739 words) [view diff] case mismatch in snippet view article find links to article

LW. Massengill, “Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications,” Nuclear Science, IEEE Transactions

Veeco (1,923 words) [view diff] exact match in snippet view article find links to article

materials like indium phosphide (InP), gallium arsenide (GaAs) and gallium nitride (GaN) in a single crystal layer to form a thin film. It is used for

MEMS for in situ mechanical characterization (2,026 words) [view diff] exact match in snippet view article find links to article

Ruoff, and V.M. Bright (2011). "Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages". Sensors and Actuators A. 166 (2): 177–186

Amplifier (7,058 words) [view diff] exact match in snippet view article find links to article

points where size and efficiency are the drivers. New materials like gallium nitride (GaN) or GaN on silicon or on silicon carbide/SiC are emerging in HEMT

Blue (7,859 words) [view diff] exact match in snippet view article find links to article

Takashi and Nakamura, Shuji U.S. patent 5,578,839 "Light-emitting gallium nitride-based compound semiconductor device" Issue date: 26 November 1996 "Professor

Field-effect transistor (6,396 words) [view diff] exact match in snippet view article find links to article

materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs). In June 2011, IBM announced

Diffraction topography (7,619 words) [view diff] exact match in snippet view article find links to article

right shows a diffraction image of the section of a sample having a gallium nitride (GaN) layer grown by metal-organic vapour phase epitaxy on sapphire

Comparison of ARM processors (2,008 words) [view diff] no match in snippet view article find links to article

16 September 2019 "Fujitsu Successfully Triples the Power Output of Gallium-Nitride Transistors – Fujitsu Global". fujitsu.com. Retrieved 23 November 2020

Interatomic potential (7,389 words) [view diff] exact match in snippet view article find links to article

Nordlund, K. (2009). "Dynamic charge-transfer bond-order potential for gallium nitride". Philosophical Magazine. 89 (34–36): 3477–3497. Bibcode:2009PMag.

Top 50 Influential Women in Engineering (5,144 words) [view diff] case mismatch in snippet view article find links to article

Electralink Rachel Oliver, professor, director of the Cambridge Centre for Gallium Nitride, CSO of Poro Technology, University of Cambridge Jo Parker, director

Laser induced white emission (3,778 words) [view diff] exact match in snippet view article find links to article

P.; Strek, W. (December 2020). "Laser induced emission spectra of gallium nitride nanoceramics". Ceramics International. 46 (18): 29060–29066. doi:10

List of fellows of IEEE Electron Devices Society (69 words) [view diff] exact match in snippet view article find links to article

and mixed-signal circuits 2017 Tomas Palacios For contributions to gallium nitride electron devices and two-dimensional materials 2017 Andrei Vladimirescu

Pseudo Jahn–Teller effect (5,604 words) [view diff] exact match in snippet view article find links to article

are sought for in silicene, phosphorene, boron nitride, zinc oxide, gallium nitride, as well as in 2D transition metal dichalkogenides and oxides, plus

Transistor count (10,130 words) [view diff] no match in snippet view article find links to article

Retrieved June 19, 2019. "Fujitsu Successfully Triples the Power Output of Gallium-Nitride Transistors". Fujitsu. August 22, 2018. Retrieved June 19, 2019. "Hot

List of IEC standards (17,117 words) [view diff] case mismatch in snippet view article find links to article

63419 Guideline for Switching Reliability Evaluation procedures for Gallium Nitride Power Conversion Devices IEC/SRD 63420 Cooperative Multiple Systems

Integrated Air and Missile Defense (4,241 words) [view diff] exact match in snippet view article find links to article

approaching threat with high-fidelity sensor “pings”; its semiconductor gallium nitride (GaN) emitters allow increased resolution, accuracy, and power efficiency

Integrated Air and Missile Defense Battle Command System (3,580 words) [view diff] exact match in snippet view article find links to article

approaching threat with high-fidelity sensor "pings"; its semiconductor gallium nitride (GaN) emitters allow increased resolution, accuracy, and power efficiency