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Longer titles found: Fin field-effect transistor (view), Chemical field-effect transistor (view), Organic field-effect transistor (view), Carbon nanotube field-effect transistor (view), Tunnel field-effect transistor (view), DNA field-effect transistor (view)

searching for Field-effect transistor 171 found (556 total)

alternate case: field-effect transistor

Dawon Kahng (1,186 words) [view diff] exact match in snippet view article find links to article

best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in

Regenerative loop antenna (81 words) [view diff] no match in snippet view article find links to article

this feedback winding in the drain circuit of a JFET (junction field effect transistor). An antenna of this type employing vacuum tubes was constructed

Variable-gain amplifier (909 words) [view diff] exact match in snippet view article find links to article

circuit elements that can be produced by using a JFET (junction field-effect transistor) with simple biasing. VCRs manufactured in this way can be obtained

Traffic Service Position System (641 words) [view diff] no match in snippet view article find links to article

developed by Bell Labs similar to core memory) and Insulated Gate Field Effect Transistor solid state memory devices similar to dynamic random access memory

Gate oxide (566 words) [view diff] exact match in snippet view article find links to article

separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the

Floating-gate MOSFET (1,865 words) [view diff] exact match in snippet view article find links to article

floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating

Ion semiconductor sequencing (1,468 words) [view diff] exact match in snippet view article find links to article

causes the release of a hydrogen ion that triggers an ion-sensitive field-effect transistor (ISFET) sensor, which indicates that a reaction has occurred. If

Self-aligned gate (3,759 words) [view diff] exact match in snippet view article find links to article

whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions

Image sensor (2,967 words) [view diff] exact match in snippet view article find links to article

based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation tend to involve

Oxide thin-film transistor (973 words) [view diff] no match in snippet view article find links to article

metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor (MOSFET) where the word "oxide" refers to the insulating gate dielectric

Spin transistor (508 words) [view diff] exact match in snippet view article find links to article

sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named

10 nm process (1,969 words) [view diff] exact match in snippet view article find links to article

needed] All production "10 nm" processes are based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar

Robert W. Bower (1,151 words) [view diff] exact match in snippet view article find links to article

known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at

Operational transconductance amplifier (1,057 words) [view diff] no match in snippet view article find links to article

Although most units are constructed with bipolar transistors, field effect transistor units are also produced. Like a standard operational amplifier

14 nm process (2,837 words) [view diff] exact match in snippet view article find links to article

was expected to be "16 nm". All "14 nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar

Multi-level cell (2,337 words) [view diff] exact match in snippet view article find links to article

consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required

Modulation doping (321 words) [view diff] exact match in snippet view article find links to article

electrical mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a MODFET. One advantage of modulation doping is that

Open collector (1,999 words) [view diff] no match in snippet view article find links to article

junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so

Tribotronics (1,045 words) [view diff] exact match in snippet view article find links to article

unit, contact electrification field-effect transistor (CE-FET) composed of a metal–oxide–semiconductor field-effect transistor (MOSFET) without top-gate electrode

History of electronic engineering (2,797 words) [view diff] exact match in snippet view article find links to article

chip in 1959, and the silicon MOSFET (metal–oxide–semiconductor field-effect transistor) in 1959. In the UK, the subject of electronics engineering became

2 nm process (2,621 words) [view diff] exact match in snippet view article find links to article

the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer"

Native transistor (321 words) [view diff] exact match in snippet view article find links to article

transistor (or sometimes natural transistor) is a variety of the MOS field-effect transistor that is intermediate between enhancement and depletion modes. Most

Paul Richman (772 words) [view diff] case mismatch in snippet view article find links to article

MOS Field-effect Transistor Structure with Mesa-like Contact and Gate Areas and Selectively Deeper Junctions. Bipolar MOS Field Effect Transistor. MOS

GSAT-2 (397 words) [view diff] no match in snippet view article find links to article

directly measured radiation doses using a Radiation Sensitive Field Effect Transistor (RADFET) Surface Charge Monitor (SCM) to indicate the state of

1 nm process (775 words) [view diff] exact match in snippet view article find links to article

next significant milestone in MOSFET (metal–oxide–semiconductor field-effect transistor) scaling, succeeding the "2 nm" process node. It continues the

Band bending (2,686 words) [view diff] exact match in snippet view article find links to article

examples are the metal-semiconductor field-effect transistor (MESFET) and the junction field-effect transistor (JFET), both of which rely on band bending

Outline of information technology (1,141 words) [view diff] exact match in snippet view article find links to article

transistor (SGT) Power MOSFET Multi-gate field-effect transistor (MuGFET) FinFET (fin field-effect transistor) Thin-film transistor (TFT) Integrated circuit

Nanocircuitry (1,984 words) [view diff] exact match in snippet view article find links to article

team led by Bijan Davari demonstrated a metal–oxide–semiconductor field-effect transistor (MOSFET) with a 10 nm gate oxide thickness, using tungsten-gate

7 nm process (4,711 words) [view diff] exact match in snippet view article find links to article

Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021

Cemal Basaran (231 words) [view diff] no match in snippet view article find links to article

the electrostatic doping-based all-graphene nano ribbon tunnel field effect transistor, US patent number 10,593,7782. Basaran in 2011 received the American

Carl Frosch (526 words) [view diff] no match in snippet view article find links to article

NPN field effect transistor, 1957

Schön scandal (4,052 words) [view diff] case mismatch in snippet view article find links to article

PMID 12416506) J. H. Schön; Ch. Kloc; B. Batlogg (2000). "A Light-Emitting Field-Effect Transistor". Science. 290 (5493): 963–6. Bibcode:2000Sci...290..963S. doi:10

Touch switch (663 words) [view diff] no match in snippet view article find links to article

electrodes. Also, an N-channel, enhancement-mode, metal oxide field effect transistor can be used. Its gate can be connected to one of the electrodes

Electronics (3,320 words) [view diff] exact match in snippet view article find links to article

manufactured electronic device is the metal-oxide-semiconductor field-effect transistor (MOSFET), with an estimated 13 sextillion MOSFETs having been manufactured

List of acronyms: J (1,393 words) [view diff] case mismatch in snippet view article find links to article

U.S. Joint Forces Command ("jiff-comm") JFET – (i/a) Junction Field-Effect Transistor ("jay-fett") JFHQ-NCR – (i) Joint Force Headquarters National Capital

Contact resistance (1,860 words) [view diff] no match in snippet view article find links to article

Mitsumasa (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". Journal of Physical Chemistry C. 113

Frank Wanlass (451 words) [view diff] exact match in snippet view article find links to article

1967. In 1963, while studying MOSFET (metal–oxide–semiconductor field-effect transistor) structures, he noted the movement of charge through oxide onto

List of semiconductor scale examples (5,970 words) [view diff] exact match in snippet view article find links to article

semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process

Adrian Mihai Ionescu (850 words) [view diff] no match in snippet view article find links to article

(6 December 2010). Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification

Tsu-Jae King Liu (1,471 words) [view diff] exact match in snippet view article find links to article

the co-inventor of the three-dimensional FinFET transistor (fin field-effect transistor) which is the design that is used in all leading microprocessor

Robert H. Dennard (770 words) [view diff] exact match in snippet view article find links to article

IBM. Retrieved August 19, 2024. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued June 4, 1968 "DRAM Market Size, Share, Trends

Quantum point contact (2,031 words) [view diff] exact match in snippet view article find links to article

configuration of QPCs is used for demonstrating a fully ballistic field-effect transistor. Another application of the device is its use as a switch. A nickel

Video camera (1,399 words) [view diff] exact match in snippet view article find links to article

technology, which originates from the invention of the MOSFET (MOS field-effect transistor) at Bell Labs in 1959. This led to the development of semiconductor

Electronic switch (706 words) [view diff] exact match in snippet view article find links to article

electronic switch in digital circuits is the metal–oxide–semiconductor field-effect transistor (MOSFET). The analogue switch uses two MOSFET transistors in a

Electrical engineering (8,268 words) [view diff] exact match in snippet view article find links to article

Fairchild Semiconductor in 1959. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed Atalla and Dawon Kahng

Metal gate (760 words) [view diff] exact match in snippet view article find links to article

the name remained. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959

Radio-frequency engineering (714 words) [view diff] exact match in snippet view article find links to article

power Digital radio RF power amplifiers Metal–oxide–semiconductor field-effect transistor (MOSFET)s: Power MOSFET, Laterally-diffused metal-oxide semiconductor

Bandwidth (computing) (1,217 words) [view diff] exact match in snippet view article

personal area networks. The MOSFET (metal–oxide–semiconductor field-effect transistor) is the most important factor enabling the rapid increase in bandwidth

Semiconductor memory (3,551 words) [view diff] exact match in snippet view article find links to article

memory) – This uses memory cells consisting of one MOSFET (MOS field-effect transistor) and one MOS capacitor to store each bit. This type of RAM is the

Ghavam Shahidi (838 words) [view diff] exact match in snippet view article find links to article

Antoniadis. A 60 nanometer silicon MOSFET (metal–oxide–semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith at

Electromechanics (1,931 words) [view diff] exact match in snippet view article find links to article

at Fairchild Semiconductor, and the metal–oxide–semiconductor field-effect transistor (MOSFET) invented at Bell Labs between 1955 and 1960, after Frosch

William Gosling (engineer) (368 words) [view diff] no match in snippet view article

1962. The design of engineering systems. New York, Wiley 1964. Field effect transistor applications. New York, Wiley 1965. Mechanical system design. With

Gamma (disambiguation) (656 words) [view diff] exact match in snippet view article

(γ) Surface tension (γ) Body effect (γ), on threshold voltage in field-effect transistor technology Christoffel symbols (Γ), in general relativity Circulation

Spin qubit quantum computer (1,333 words) [view diff] exact match in snippet view article find links to article

Kuhlmann, Andreas V. (2022-03-03). "A hole spin qubit in a fin field-effect transistor above 4 kelvin". Nature Electronics. 5 (3): 178–183. arXiv:2103

Biasing (1,350 words) [view diff] exact match in snippet view article find links to article

voltages. Electret microphone elements typically include a junction field-effect transistor as an impedance converter to drive other electronics within a few

Robert Arns (199 words) [view diff] exact match in snippet view article find links to article

other transistor: early history of the metal-oxide-semiconductor field-effect transistor," Engineering Science and Education Journal, 7, No. 5 (October

History of electrical engineering (4,655 words) [view diff] exact match in snippet view article find links to article

Wiley. p. 1. ISBN 9780471828679. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scale

Silicon on sapphire (1,165 words) [view diff] exact match in snippet view article find links to article

and P.H. Robinson fabricated a MOSFET (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories. SOS

Germanane (513 words) [view diff] no match in snippet view article find links to article

the University of Ioannina in Greece, have reported on the first field effect transistor fabricated with germanane, highlighting its promising electronic

Zeynep Çelik-Butler (533 words) [view diff] exact match in snippet view article find links to article

McWhorter Noise Model and applied to metal–oxide–semiconductor field-effect transistor (MOSFETs). Most recently, the same model has been revised to account

Igor Tamm (1,325 words) [view diff] exact match in snippet view article find links to article

states. This concept is important for metal–oxide–semiconductor field-effect transistor (MOSFET) physics. In 1934, Tamm and Semen Altshuller suggested

Interplanetary Monitoring Platform (617 words) [view diff] exact match in snippet view article find links to article

for the Apollo program. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was adopted by NASA for the IMP program in

Zirconium dioxide (2,302 words) [view diff] no match in snippet view article find links to article

vapor deposition of zirconium oxide for metal–oxide–semiconductor field effect transistor application". Journal of Vacuum Science and Technology B. 19 (5):

Strongly correlated material (1,105 words) [view diff] no match in snippet view article find links to article

potentially be used to make transistors that would use conventional field effect transistor configurations to take advantage of the material's sharp change

Dosimeter (1,731 words) [view diff] exact match in snippet view article find links to article

and thereby re-used multiple times. Metal–oxide–semiconductor field-effect transistor dosimeters are now used as clinical dosimeters for radiotherapy

Time of flight (2,059 words) [view diff] no match in snippet view article find links to article

Manaka; M. Iwamot (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". J. Phys. Chem. C. 113 (43): 18459

Digital signal (1,567 words) [view diff] exact match in snippet view article find links to article

circuits are typically generated by metal–oxide–semiconductor field-effect transistor (MOSFET) devices, due to their rapid on–off electronic switching

Mixed-signal integrated circuit (2,756 words) [view diff] exact match in snippet view article find links to article

the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced

Silicon-tin (1,009 words) [view diff] exact match in snippet view article find links to article

of tin in silicon. The first MOSFET (metal–oxide–semiconductor field-effect transistor) using SiSn as a channel material was shown in 2013. This study

Amorphous solid (2,999 words) [view diff] exact match in snippet view article find links to article

isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor (MOSFET). Also, hydrogenated amorphous silicon (Si:H) is of technical

Telephony (3,028 words) [view diff] exact match in snippet view article find links to article

was enabled by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET), which led to the rapid development and wide adoption

Federico Faggin (4,789 words) [view diff] no match in snippet view article find links to article

consciousness. Faggin, F., Klein, T., and Vadasz, L.: Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates. The Silicon Gate Technology

Utimaco Atalla (1,670 words) [view diff] exact match in snippet view article find links to article

Atalla, the inventor of the MOSFET (metal–oxide–semiconductor field-effect transistor). In 1972, Atalla filed U.S. patent 3,938,091 for a remote PIN

University of Twente (1,473 words) [view diff] exact match in snippet view article find links to article

Development, Uganda Piet Bergveld, inventor of the ion-sensitive field-effect transistor (ISFET) sensor "Facts and Figures from 2020". Archived from the

Suzhou Oriental Semiconductor (158 words) [view diff] exact match in snippet view article find links to article

2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013. Wang, P.-F.; Lin, X.; Liu

Programmable logic device (2,579 words) [view diff] exact match in snippet view article find links to article

circuit. An EPROM memory cell is a MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) that can be switched on by trapping an electric

Supriyo Datta (1,312 words) [view diff] no match in snippet view article find links to article

Kumar (2021-10-01). "A review on emerging negative capacitance field effect transistor for low power electronics". Microelectronics Journal. 116: 105242

Audio power amplifier (2,061 words) [view diff] exact match in snippet view article find links to article

bipolar junction transistor (BJT) and the metal–oxide–semiconductor field-effect transistor (MOSFET). Transistor-based amplifiers are lighter in weight, more

List of fellows of IEEE Electron Devices Society (69 words) [view diff] no match in snippet view article find links to article

advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989 Krishna Saraswat For contributions to metallization

Franklin Institute Awards (693 words) [view diff] exact match in snippet view article find links to article

technology, and for the development of the MOS insulated gate, field-effect transistor. "Martin Mohamed Atalla". Franklin Institute Awards. The Franklin

Silicon on insulator (1,979 words) [view diff] exact match in snippet view article find links to article

alternative to FinFETs. An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon

Carlos Paz de Araújo (465 words) [view diff] case mismatch in snippet view article find links to article

Patent Application for FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR Patent Application (Application #20220199631 issued June 23, 2022)

Traitorous eight (5,025 words) [view diff] no match in snippet view article find links to article

production, and five employees, led by Noyce, continued the work on a field effect transistor for Beckman Instruments. Shockley refused to work on bipolar transistors

Spintronics (3,429 words) [view diff] no match in snippet view article find links to article

for spintronics began with the theoretical proposal of a spin field-effect-transistor by Datta and Das in 1990 and of the electric dipole spin resonance

Computer engineering (2,638 words) [view diff] exact match in snippet view article find links to article

Fairchild Semiconductor in 1959, the metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) demonstrated by a team at Bell Labs

Microbolometer (1,840 words) [view diff] no match in snippet view article find links to article

used a thin film transistor (TFT), which is a special kind of field effect transistor. The main change in these devices would be the addition of a gate

Bijan Davari (1,006 words) [view diff] exact match in snippet view article find links to article

Davari worked on ways to improve MOSFET (metal–oxide–semiconductor field-effect transistor) and CMOS (complementary metal–oxide–semiconductor) technology

Class-D amplifier (2,080 words) [view diff] exact match in snippet view article find links to article

development of silicon-based MOSFET (metal–oxide–semiconductor field-effect transistor) technology. In 1978, Sony introduced the TA-N88, the first class-D

Leland Clark (811 words) [view diff] case mismatch in snippet view article find links to article

Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence Technology

Electron beam-induced current (1,086 words) [view diff] case mismatch in snippet view article find links to article

(20 April 2009). "Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack". Japanese Journal of

Hot-carrier injection (1,785 words) [view diff] exact match in snippet view article find links to article

circuits (ICs) have driven the associated Metal–Oxide–Semiconductor field-effect transistor (MOSFET) to scale to smaller dimensions. However, it has not been

Yamazaki-Teiichi Prize (1,304 words) [view diff] no match in snippet view article find links to article

Electrical detection of biomolecular recognition using genetic field effect transistor and its application to genetic analyses. 2007 - Takeshi Hasegawa

Flat-panel display (2,516 words) [view diff] exact match in snippet view article find links to article

of Plasma Display Panels. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon

Explorer 33 (2,754 words) [view diff] exact match in snippet view article find links to article

first spacecraft to use the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), which was adopted by NASA for the IMP program

Computer memory (3,273 words) [view diff] exact match in snippet view article find links to article

the late 1960s. The invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) enabled the practical use of metal–oxide–semiconductor

Electric power industry (3,141 words) [view diff] exact match in snippet view article find links to article

came with the invention of the MOSFET (metal-oxide-semiconductor field-effect transistor) in 1959. Generations of MOSFETs enabled power designers to achieve

Muhammad M. Hussain (666 words) [view diff] no match in snippet view article find links to article

P.; Hussain, Muhammad M. (12 October 2011). "Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation

Transistor radio (3,256 words) [view diff] exact match in snippet view article find links to article

other transistor: early history of the metal–oxide–semiconductor field-effect transistor" (PDF). Engineering Science and Education Journal. 7 (5): 233–240

Electric power industry (3,141 words) [view diff] exact match in snippet view article find links to article

came with the invention of the MOSFET (metal-oxide-semiconductor field-effect transistor) in 1959. Generations of MOSFETs enabled power designers to achieve

Mitiko Miura-Mattausch (225 words) [view diff] no match in snippet view article find links to article

2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling". Miura-Mattausch is the author or editor of:

Gerhard Klimeck (1,299 words) [view diff] case mismatch in snippet view article find links to article

generating a memory cell U.S. Patent 2012/0043,607: Tunneling Field-Effect Transistor with Low Leakage Current U.S. patent No. 9,858,365: “Physical modeling

EEPROM (2,931 words) [view diff] no match in snippet view article find links to article

Joseph J. & Joshi, Madhukar L., "Method of forming self-aligned field effect transistor and charge-coupled device", issued 1975-02-11 Masuoka, Fujio (31

Kenneth L Shepard (1,697 words) [view diff] exact match in snippet view article find links to article

graphene, in electronic devices. This included seminal papers on field-effect transistor operation in graphene, on using boron nitride as a gate dielectric

IBM Simon (1,867 words) [view diff] exact match in snippet view article find links to article

not released. With advances in MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology enabling smaller integrated circuit

RF Micropower (659 words) [view diff] no match in snippet view article find links to article

Applications of RF Micropower's Si-MESFET (metal-semiconductor field-effect-transistor) technology in linear and switching regulators for radiation environments

Chih-Tang Sah (1,458 words) [view diff] exact match in snippet view article find links to article

circuit production. After the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was first demonstrated by Mohamed Atalla and

National Semiconductor (2,943 words) [view diff] exact match in snippet view article find links to article

(transistor–transistor logic) and MOSFET (metal–oxide–semiconductor field-effect transistor) integrated circuit technologies. As they had while employed in

Keio 9000 series (1,009 words) [view diff] exact match in snippet view article find links to article

power module combining an SiC MOSFET (metal–oxide–semiconductor field-effect transistor) with an SiC SBD (Schottky barrier diode). 私鉄車両年鑑 2013: 大手15社営業用車両完全網羅

Bich-Yen Nguyen (355 words) [view diff] exact match in snippet view article find links to article

there included the development of the multiple-independent-gate field-effect transistor (MIGFET), as well as CMOS technology. As head of advanced transistor

Single-atom transistor (557 words) [view diff] exact match in snippet view article find links to article

four and six individually implanted As or P atoms. QFET (quantum field-effect transistor) Xie, F.-Q.; Nittler, L.; Obermair, Ch.; Schimmel, Th. (2004-09-15)

Direction finding (10,458 words) [view diff] exact match in snippet view article find links to article

oxide semiconductor field effect transistor (MOSFET). Others followed, for example, the metal-semiconductor field-effect transistor and the high electron

List of electrical engineers (70 words) [view diff] exact match in snippet view article find links to article

Re-formulated Maxwell's equations (vector calculus) Oskar Heil Field-effect transistor, loudspeaker Heinrich Rudolf Hertz Hertzian waves Peter Cooper

Frequency multiplier (1,760 words) [view diff] exact match in snippet view article find links to article

Sheng; Peng, Lian-Mao (2010). "A high-performance top-gate graphene field-effect transistor based frequency doubler". Applied Physics Letters. 96 (17): 173104

Plate detector (radio) (1,297 words) [view diff] no match in snippet view article

Detector". An example schematic diagram of an implementation using a field effect transistor is shown. As with the standard plate detector, the device is biased

Debye length (2,744 words) [view diff] no match in snippet view article find links to article

(2007-11-01). "Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors". Nano Letters. 7 (11): 3405–3409. Bibcode:2007NanoL..

Paolo Samorì (1,374 words) [view diff] exact match in snippet view article find links to article

photochromic systems it is possible to fabricate optically switchable field-effect transistor as a first step towards multifunctional devices. Such research

LSK489 (645 words) [view diff] exact match in snippet view article find links to article

Monolithic N-Channel junction-gate field-effect transistor

Harvey Prize (431 words) [view diff] exact match in snippet view article find links to article

used in the miniaturization of MOSFET (metal oxide semiconductor field-effect transistor) integrated circuits. 1991 Jacques-Louis Lions France Creating

Random-access memory (5,812 words) [view diff] exact match in snippet view article find links to article

Needs". Computer History Museum. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04 "IBM Archives -- FAQ's for Products

Current source (4,196 words) [view diff] exact match in snippet view article find links to article

an enhancement-mode N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) could be used instead of a JFET in the circuits listed below for

LED circuit (2,674 words) [view diff] exact match in snippet view article find links to article

regulated using a depletion-mode MOSFET (metal–oxide–semiconductor field-effect transistor), which is the simplest current limiter. Low drop-out (LDO) constant

Dynamic random-access memory (11,073 words) [view diff] exact match in snippet view article find links to article

invention: "Each cell is formed, in one embodiment, using a single field-effect transistor and a single capacitor." MOS DRAM chips were commercialized in

History of telecommunication (5,531 words) [view diff] exact match in snippet view article find links to article

to digital RF technology. Advances in metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) technology, the key component of the

Remote control (4,489 words) [view diff] exact match in snippet view article find links to article

control that uses digital signals and metal–oxide–semiconductor field-effect transistor (MOSFET) memory. This was widely adopted for color television,

History of the telephone (6,617 words) [view diff] exact match in snippet view article find links to article

enabled by metal–oxide–semiconductor (MOS) technology. The MOS field-effect transistor (MOSFET) was invented by Mohamed M. Atalla and Dawon Kahng at Bell

Carbon peapod (1,427 words) [view diff] no match in snippet view article find links to article

Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor". Japanese Journal of Applied Physics. 42: 5392–5394. Bibcode:2003JaJAP

Massood Tabib-Azar (878 words) [view diff] no match in snippet view article find links to article

Tabib-Azar, Massood (2013). "Operation principles of micro-plasma field effect transistor". 2013 Transducers & Eurosensors XXVII: The 17th International

Asad Abidi (1,497 words) [view diff] exact match in snippet view article find links to article

the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced

Jürgen P. Rabe (1,991 words) [view diff] no match in snippet view article find links to article

Jürgen P. (2004-5-6). "Prototypical single molecule chemical field effect transistor with nanometer-sized gates". Physical Review Letters. 92 (18).

Digital image processing (5,364 words) [view diff] exact match in snippet view article find links to article

Wiley. p. 1. ISBN 978-0-471-82867-9. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scale

Nanochemistry (4,484 words) [view diff] exact match in snippet view article find links to article

detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor". Nature Nanotechnology. 6 (2): 126–132. Bibcode:2011NatNa...6

Daniel M. Fleetwood (1,051 words) [view diff] no match in snippet view article find links to article

based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory). This chip was also recognized as Discover magazine's 1998

Read-only memory (5,727 words) [view diff] exact match in snippet view article find links to article

designers' convenience. The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, enabled the practical

Advanced Linear Devices (1,242 words) [view diff] no match in snippet view article find links to article

threshold voltage. ALD optimizes the Metal Oxide Semiconductor Field Effect Transistor, or MOSFET, which can be used to build low-voltage, low-power,

Variable retention time (2,396 words) [view diff] exact match in snippet view article find links to article

noise in junction leakage current of metal-oxide-semiconductor field-effect transistor". Journal of Applied Physics. 111 (10): 104513–104513–9. Bibcode:2012JAP

Molecular models of DNA (3,768 words) [view diff] case mismatch in snippet view article find links to article

Sivan; Erez Braun (November 2003). "DNA-Templated Carbon Nanotube Field-Effect Transistor". Science. 302 (6549): 1380–2. Bibcode:2003Sci...302.1380K. CiteSeerX 10

Power semiconductor device (3,298 words) [view diff] no match in snippet view article find links to article

exist, such as the bipolar junction transistor, the vertical MOS field effect transistor, and others. Power levels for individual amplifier devices range

History of computing (6,610 words) [view diff] exact match in snippet view article find links to article

for engineering and scientific purposes. The metal–oxide–silicon field-effect transistor (MOSFET), also known as the MOS transistor, was invented at Bell

Zhong Lin Wang (2,860 words) [view diff] case mismatch in snippet view article find links to article

Changbao; Wang, Zhong Lin (2014-08-26). "Contact Electrification Field-Effect Transistor". ACS Nano. 8 (8): 8702–8709. doi:10.1021/nn5039806. ISSN 1936-0851

History of radio (8,491 words) [view diff] exact match in snippet view article find links to article

transatlantic television signal. Mid-1960s: Metal–oxide–semiconductor field-effect transistor (MOSFET) first used for television, by the Radio Corporation of

Microprocessor (9,697 words) [view diff] no match in snippet view article find links to article

Faggin, F.; Klein, T.; Vadasz, L. (23 October 1968). Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates (JPEG image). International

Bell Labs (12,233 words) [view diff] exact match in snippet view article find links to article

invention of the junction transistor, the analog and the junction field-effect transistor, and the theory underlying their operation. 1981 Sidney Darlington

Zinc oxide (9,324 words) [view diff] exact match in snippet view article find links to article

Pearton SJ, Kang BS, Ren F (2004). "Depletion-mode ZnO nanowire field-effect transistor". Applied Physics Letters. 85 (12): 2274. Bibcode:2004ApPhL..85

Intel 4004 (6,751 words) [view diff] no match in snippet view article find links to article

computer. Faggin, F., Klein, T., and Vadasz, L.: Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates.Cover and abstract of the

Francis G. Rayer (807 words) [view diff] no match in snippet view article find links to article

(1968) A guide to outdoor building (Arthur Barker 1970) 50 (FET) Field Effect Transistor Projects (Babani 1977) How to Make Walkie Talkies (Babani 1977)

Dominik Zumbühl (736 words) [view diff] exact match in snippet view article find links to article

Zumbühl, D. M., & Kuhlmann, A. V. (2022). A hole spin qubit in a fin field-effect transistor above 4 kelvin. Nature Electronics, 5(3), 178-183. https://doi

List of Korean inventions and discoveries (16,101 words) [view diff] exact match in snippet view article find links to article

field-effect transistor (MOSFET) In 1959, Dawon Kahng and Mohamed Atalla at Bell Labs invented the metal–oxide–semiconductor field-effect transistor (MOSFET)

Xiao Wei Sun (2,961 words) [view diff] no match in snippet view article find links to article

display companies like TCL. He also developed a split drain magnetic field effect transistor (MAGFET) with supplemental gates that create a lateral electric

Pressure measurement (10,176 words) [view diff] exact match in snippet view article find links to article

combustion engine's electronic control system MOSFET – Type of field-effect transistor Pitot tube – Device which measures fluid flow velocity, typically

Small RNA sequencing (2,046 words) [view diff] exact match in snippet view article find links to article

chip where the sample is loaded integrated with an ion-sensitive field-effect transistor able to sensitively detect reductions of the pH value due to the

Carrier scattering (3,188 words) [view diff] exact match in snippet view article find links to article

Figure 4: Hydrogen passivation of a Si metal–oxide–semiconductor field-effect transistor (MOSFET) for reduction of Si/SiO2 interface states. Hydrogen bonds

Intel (25,480 words) [view diff] exact match in snippet view article find links to article

memory (ROM) and the first commercial metal–oxide–semiconductor field-effect transistor (MOSFET) silicon gate SRAM chip, the 256-bit 1101. While the 1101

Raj Mohanty (1,780 words) [view diff] no match in snippet view article find links to article

Mohanty and his team demonstrated that their silicon nanowire field effect transistor sensor can detect a number of analytes, relevant in cancer and

List of acronyms: M (4,648 words) [view diff] case mismatch in snippet view article find links to article

Quality (ITU-T P.800.1) MOSFET – (a) Metal-Oxide-Semiconductor Field-Effect Transistor MOSS – (p) MObile Submarine Simulator – (a) Moving Object Support

Tube sound (5,868 words) [view diff] exact match in snippet view article find links to article

transistor-based audio power amplifiers use MOSFET (metal–oxide–semiconductor field-effect transistor) devices in their power sections, because their distortion curve

Center for Advancing Electronics Dresden (2,017 words) [view diff] no match in snippet view article find links to article

Enrichment of sc-SWCNTs (DOI: 10.1002/pssa.201431771) Organic Inversion Field Effect Transistor (DOI: 10.1038/ncomms3775) Organic Permeable Base Transistor (OPBT)

Flash memory (17,263 words) [view diff] exact match in snippet view article find links to article

each memory cell resembles a standard metal–oxide–semiconductor field-effect transistor (MOSFET) except that the transistor has two gates instead of one

List of Egyptian inventions and discoveries (17,959 words) [view diff] exact match in snippet view article find links to article

Egyptian scientist Mostafa El-Sayed. Metal–oxide–semiconductor field-effect transistor (MOSFET) — Invented by Egyptian engineer Mohamed M. Atalla with

Quantum dot (13,815 words) [view diff] no match in snippet view article find links to article

Prati, Enrico (2015). "Tunable single hole regime of a silicon field effect transistor in standard CMOS technology". Applied Physics Express. 9 (11):

E. Fred Schubert (1,328 words) [view diff] exact match in snippet view article find links to article

Schubert, E.F.; Fischer, A.; Ploog, K. (1986). "The delta-doped field-effect transistor". IEEE Transactions on Electron Devices. ED-33 (5): 625–632. Retrieved

Wearable technology (13,427 words) [view diff] exact match in snippet view article find links to article

Anne M.; Emaminejad, Sam (7 January 2022). "Wearable aptamer-field-effect transistor sensing system for noninvasive cortisol monitoring". Science Advances

History of computing hardware (17,730 words) [view diff] exact match in snippet view article find links to article

and lunar ascent modules. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon

CfA 1.2 m Millimeter-Wave Telescope (3,760 words) [view diff] no match in snippet view article find links to article

that is further amplified with a low-noise high electron mobility field effect transistor (HEMT FET) amplifier, and passed to the IF section of the receiver

Carbon nanotubes in medicine (3,864 words) [view diff] no match in snippet view article find links to article

as the semi-conductive channel in a silicon-silicon oxide based field effect transistor (FET). Based on previous Langmuir DNA kinetics calculations, the

Blackmer gain cell (3,831 words) [view diff] exact match in snippet view article find links to article

an attenuator rather than an amplifier; it employed a junction field-effect transistor in voltage-controlled resistance mode. These attenuators, which

Keikyu N1000 series (5,130 words) [view diff] exact match in snippet view article find links to article

power module combining an SiC MOSFET (metal–oxide–semiconductor field-effect transistor) with an SiC SBD (Schottky barrier diode). Keikyu N1000 series

List of IEEE Milestones (1,960 words) [view diff] case mismatch in snippet view article find links to article

Diameter Photomultiplier Tubes 1979 – Amorphous Silicon Thin Film Field-Effect Transistor Switches for Liquid Crystal Displays 1979 – HEMT (high-electron-mobility

1981 Birthday Honours (17,642 words) [view diff] no match in snippet view article find links to article

National Coal Board. James Aubrey Turner, Manager, Microwave Field Effect Transistor Department, Plessey Research (Caswell) Ltd. The Reverend William

Timeline of United States inventions (1890–1945) (25,238 words) [view diff] no match in snippet view article

times by the same vacuum tube or other active component such as a field effect transistor. A regenerative circuit is often an AM detector, converting the

Metal–organic framework (22,820 words) [view diff] no match in snippet view article find links to article

(SURMOF-2) growth on alumina layer on top of back gated Graphene Field Effect Transistor (GFET) can provide a sensor that is only sensitive to ethanol but

List of National Inventors Hall of Fame inductees (15,291 words) [view diff] case mismatch in snippet view article find links to article

invent.org. June 4, 2024. "NIHF Inductee Dawon Kahng Invented the Field-Effect Transistor". www.invent.org. June 4, 2024. "NIHF Inductee Dov Frohman-Bentchkowsky