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Longer titles found: Fin field-effect transistor (view), Chemical field-effect transistor (view), Organic field-effect transistor (view), Carbon nanotube field-effect transistor (view), Tunnel field-effect transistor (view), DNA field-effect transistor (view)

searching for Field-effect transistor 167 found (536 total)

alternate case: field-effect transistor

Dawon Kahng (1,186 words) [view diff] exact match in snippet view article find links to article

best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in

this feedback winding in the drain circuit of a JFET (junction field effect transistor). An antenna of this type employing vacuum tubes was constructed

circuit elements that can be produced by using a JFET (junction field-effect transistor) with simple biasing. VCRs manufactured in this way can be obtained

floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating

developed by Bell Labs similar to core memory) and Insulated Gate Field Effect Transistor solid state memory devices similar to dynamic random access memory

causes the release of a hydrogen ion that triggers an ion-sensitive field-effect transistor (ISFET) sensor, which indicates that a reaction has occurred. If

sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named

whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions

based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation tend to involve

separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the

metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor (MOSFET) where the word "oxide" refers to the insulating gate dielectric

needed] All production "10 nm" processes are based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar

known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at

was expected to be "16 nm". All "14 nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar

Although most units are constructed with bipolar transistors, field effect transistor units are also produced. Like a standard operational amplifier

consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required

junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so

chip in 1959, and the silicon MOSFET (metal–oxide–semiconductor field-effect transistor) in 1959. In the UK, the subject of electronics engineering became

electrical mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a MODFET. One advantage of modulation doping is that

unit, contact electrification field-effect transistor (CE-FET) composed of a metal–oxide–semiconductor field-effect transistor (MOSFET) without top-gate electrode

the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer"

directly measured radiation doses using a Radiation Sensitive Field Effect Transistor (RADFET) Surface Charge Monitor (SCM) to indicate the state of

transistor (or sometimes natural transistor) is a variety of the MOS field-effect transistor that is intermediate between enhancement and depletion modes. Most

MOS Field-effect Transistor Structure with Mesa-like Contact and Gate Areas and Selectively Deeper Junctions. Bipolar MOS Field Effect Transistor. MOS

examples are the metal-semiconductor field-effect transistor (MESFET) and the junction field-effect transistor (JFET), both of which rely on band bending

transistor (SGT) Power MOSFET Multi-gate field-effect transistor (MuGFET) FinFET (fin field-effect transistor) Thin-film transistor (TFT) Integrated circuit

manufactured electronic device is the metal-oxide-semiconductor field-effect transistor (MOSFET), with an estimated 13 sextillion MOSFETs having been manufactured

Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021

the electrostatic doping-based all-graphene nano ribbon runnel field effect transistor, US patent number 10,593,7782. Basaran in 2011 received the American

team led by Bijan Davari demonstrated a metal–oxide–semiconductor field-effect transistor (MOSFET) with a 10 nm gate oxide thickness, using tungsten-gate

U.S. Joint Forces Command ("jiff-comm") JFET – (i/a) Junction Field-Effect Transistor ("jay-fett") JFHQ-NCR – (i) Joint Force Headquarters National Capital

NPN field effect transistor, 1957

PMID 12416506) J. H. Schön; Ch. Kloc; B. Batlogg (2000). "A Light-Emitting Field-Effect Transistor". Science. 290 (5493): 963–6. Bibcode:2000Sci...290..963S. doi:10

electrodes. Also, an N-channel, enhancement-mode, metal oxide field effect transistor can be used. Its gate can be connected to one of the electrodes

Mitsumasa (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". Journal of Physical Chemistry C. 113

1967. In 1963, while studying MOSFET (metal–oxide–semiconductor field-effect transistor) structures, he noted the movement of charge through oxide onto

the co-inventor of the three-dimensional FinFET transistor (fin field-effect transistor) which is the design that is used in all leading microprocessor

semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process

electronic switch in digital circuits is the metal–oxide–semiconductor field-effect transistor (MOSFET). The analogue switch uses two MOSFET transistors in a

the name remained. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959

Fairchild Semiconductor in 1959. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed Atalla and Dawon Kahng

IBM. Retrieved August 19, 2024. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04  "DRAM Market Size, Share, Trends, Growth

technology, which originates from the invention of the MOSFET (MOS field-effect transistor) at Bell Labs in 1959. This led to the development of semiconductor

configuration of QPCs is used for demonstrating a fully ballistic field-effect transistor. Another application of the device is its use as a switch. A nickel

personal area networks. The MOSFET (metal–oxide–semiconductor field-effect transistor) is the most important factor enabling the rapid increase in bandwidth

Emmy, Grammy, and Tony Awards Gate (transistor), terminal of a field effect transistor Logic gate, a functional building block in digital logic such as

(γ) Surface tension (γ) Body effect (γ), on threshold voltage in field-effect transistor technology Christoffel symbols (Γ), in general relativity Circulation

power Digital radio RF power amplifiers Metal–oxide–semiconductor field-effect transistor (MOSFET)s: Power MOSFET, Laterally-diffused metal-oxide semiconductor

Antoniadis. A 60 nanometer silicon MOSFET (metal–oxide–semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith at

at Fairchild Semiconductor, and the metal–oxide–semiconductor field-effect transistor (MOSFET) invented at Bell Labs between 1955 and 1960, after Frosch

voltages. Electret microphone elements typically include a junction field-effect transistor as an impedance converter to drive other electronics within a few

other transistor: early history of the metal-oxide-semiconductor field-effect transistor," Engineering Science and Education Journal, 7, No. 5 (October

for the Apollo program. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was adopted by NASA for the IMP program in

vapor deposition of zirconium oxide for metal–oxide–semiconductor field effect transistor application". Journal of Vacuum Science and Technology B. 19 (5):

and thereby re-used multiple times. Metal–oxide–semiconductor field-effect transistor dosimeters are now used as clinical dosimeters for radiotherapy

circuits are typically generated by metal–oxide–semiconductor field-effect transistor (MOSFET) devices, due to their rapid on–off electronic switching

Wiley. p. 1. ISBN 9780471828679. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scale

and P.H. Robinson fabricated a MOSFET (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories. SOS

the University of Ioannina in Greece, have reported on the first field effect transistor fabricated with germanane, highlighting its promising electronic

McWhorter Noise Model and applied to metal–oxide–semiconductor field-effect transistor (MOSFETs). Most recently, the same model has been revised to account

potentially be used to make transistors that would use conventional field effect transistor configurations to take advantage of the material's sharp change

states. This concept is important for metal–oxide–semiconductor field-effect transistor (MOSFET) physics. In 1934, Tamm and Semen Altshuller suggested

2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013. Wang, P.-F.; Lin, X.; Liu

the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced

Manaka; M. Iwamot (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". J. Phys. Chem. C. 113 (43): 18459

Development, Uganda Piet Bergveld, inventor of the ion-sensitive field-effect transistor (ISFET) sensor "Facts and Figures from 2020". Archived from the

of tin in silicon. The first MOSFET (metal–oxide–semiconductor field-effect transistor) using SiSn as a channel material was shown in 2013. This study

isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor (MOSFET). Also, hydrogenated amorphous silicon (Si:H) is of technical

was enabled by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET), which led to the rapid development and wide adoption

1962. The design of engineering systems. New York, Wiley 1964. Field effect transistor applications. New York, Wiley 1965. Mechanical system design. With

consciousness. Faggin, F., Klein, T., and Vadasz, L.: Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates. The Silicon Gate Technology

circuit. An EPROM memory cell is a MOSFET (metal-oxide semiconductor field-effect transistor, or MOS transistor) that can be switched on by trapping an electric

advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989 Krishna Saraswat For contributions to metallization

production, and five employees, led by Noyce, continued the work on a field effect transistor for Beckman Instruments. Shockley refused to work on bipolar transistors

its demise. With advances in MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology enabling smaller integrated circuit

bipolar junction transistor (BJT) and the metal–oxide–semiconductor field-effect transistor (MOSFET). Transistor-based amplifiers are lighter in weight, more

alternative to FinFETs. An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon

Kumar (2021-10-01). "A review on emerging negative capacitance field effect transistor for low power electronics". Microelectronics Journal. 116: 105242

used a thin film transistor (TFT), which is a special kind of field effect transistor. The main change in these devices would be the addition of a gate

technology, and for the development of the MOS insulated gate, field-effect transistor. "Martin Mohamed Atalla". Franklin Institute Awards. The Franklin

Patent Application for FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR Patent Application (Application #20220199631 issued June 23, 2022)

Atalla, the inventor of the MOSFET (metal–oxide–semiconductor field-effect transistor). In 1972, Atalla filed U.S. patent 3,938,091 for a remote PIN

other transistor: early history of the metal–oxide–semiconductor field-effect transistor" (PDF). Engineering Science and Education Journal. 7 (5): 233–240

for spintronics began with the theoretical proposal of a spin field-effect-transistor by Datta and Das in 1990 and of the electric dipole spin resonance

Re-formulated Maxwell's equations (vector calculus) Oskar Heil Field-effect transistor, loudspeaker Heinrich Rudolf Hertz Hertzian waves Peter Cooper

development of silicon-based MOSFET (metal–oxide–semiconductor field-effect transistor) technology. In 1978, Sony introduced the TA-N88, the first class-D

first spacecraft to use the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), which was adopted by NASA for the IMP program

Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence Technology

Fairchild Semiconductor in 1959, the metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) demonstrated by a team at Bell Labs

(20 April 2009). "Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack". Japanese Journal of

circuits (ICs) have driven the associated Metal–Oxide–Semiconductor field-effect transistor (MOSFET) to scale to smaller dimensions. However, it has not been

graphene, in electronic devices. This included seminal papers on field-effect transistor operation in graphene, on using boron nitride as a gate dielectric

Davari worked on ways to improve MOSFET (metal–oxide–semiconductor field-effect transistor) and CMOS (complementary metal–oxide–semiconductor) technology

the late 1960s. The invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) enabled the practical use of metal–oxide–semiconductor

(transistor–transistor logic) and MOSFET (metal–oxide–semiconductor field-effect transistor) integrated circuit technologies. As they had while employed in

of Plasma Display Panels. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon

Electrical detection of biomolecular recognition using genetic field effect transistor and its application to genetic analyses. 2007 - Takeshi Hasegawa

came with the invention of the MOSFET (metal-oxide-semiconductor field-effect transistor) in 1959. Generations of MOSFETs enabled power designers to achieve

Joseph J. & Joshi, Madhukar L., "Method of forming self-aligned field effect transistor and charge-coupled device", issued 1975-02-11  Masuoka, Fujio (31

contributions to CMOS-compatible biosensors and high permittivity field effect transistor reliability models". In 2021 she received the 2021 FIAP Career

P.; Hussain, Muhammad M. (12 October 2011). "Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation

circuit production. After the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was first demonstrated by Mohamed Atalla and

2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling". Miura-Mattausch is the author or editor of:

Applications of RF Micropower's Si-MESFET (metal-semiconductor field-effect-transistor) technology in linear and switching regulators for radiation environments

there included the development of the multiple-independent-gate field-effect transistor (MIGFET), as well as CMOS technology. As head of advanced transistor

(2007-11-01). "Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors". Nano Letters. 7 (11): 3405–3409. Bibcode:2007NanoL..

regulated using a depletion-mode MOSFET (metal–oxide–semiconductor field-effect transistor), which is the simplest current limiter. Low drop-out (LDO) constant

Sheng; Peng, Lian-Mao (2010). "A high-performance top-gate graphene field-effect transistor based frequency doubler". Applied Physics Letters. 96 (17): 173104

oxide semiconductor field effect transistor (MOSFET). Others followed, for example, the metal-semiconductor field-effect transistor and the high electron

used in the miniaturization of MOSFET (metal oxide semiconductor field-effect transistor) integrated circuits. 1991 Jacques-Louis Lions France Creating

four and six individually implanted As or P atoms. QFET (quantum field-effect transistor) Xie, F.-Q.; Nittler, L.; Obermair, Ch.; Schimmel, Th. (2004-09-15)

Detector". An example schematic diagram of an implementation using a field effect transistor is shown. As with the standard plate detector, the device is biased

memory) – This uses memory cells consisting of one MOSFET (MOS field-effect transistor) and one MOS capacitor to store each bit. This type of RAM is the

photochromic systems it is possible to fabricate optically switchable field-effect transistor as a first step towards multifunctional devices. Such research

Monolithic N-Channel junction-gate field-effect transistor

an enhancement-mode N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) could be used instead of a JFET in the circuits listed below for

control that uses digital signals and metal–oxide–semiconductor field-effect transistor (MOSFET) memory. This was widely adopted for color television,

to digital RF technology. Advances in metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) technology, the key component of the

Wiley. p. 1. ISBN 978-0-471-82867-9. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scale

enabled by metal–oxide–semiconductor (MOS) technology. The MOS field-effect transistor (MOSFET) was invented by Mohamed M. Atalla and Dawon Kahng at Bell

designers' convenience. The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, enabled the practical

Needs". Computer History Museum. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04  "IBM Archives -- FAQ's for Products

Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor". Japanese Journal of Applied Physics. 42: 5392–5394. Bibcode:2003JaJAP

Tabib-Azar, Massood (2013). "Operation principles of micro-plasma field effect transistor". 2013 Transducers & Eurosensors XXVII: The 17th International

the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the Advanced

detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor". Nature Nanotechnology. 6 (2): 126–132. Bibcode:2011NatNa...6

generating a memory cell U.S. Patent 2012/0043,607: Tunneling Field-Effect Transistor with Low Leakage Current U.S. patent No. 9,858,365: “Physical modeling

based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory). This chip was also recognized as Discover magazine's 1998

Changbao; Wang, Zhong Lin (2014-08-26). "Contact Electrification Field-Effect Transistor". ACS Nano. 8 (8): 8702–8709. doi:10.1021/nn5039806. ISSN 1936-0851

threshold voltage. ALD optimizes the Metal Oxide Semiconductor Field Effect Transistor, or MOSFET, which can be used to build low-voltage, low-power,

exist, such as the bipolar junction transistor, the vertical MOS field effect transistor, and others. Power levels for individual amplifier devices range

Sivan; Erez Braun (November 2003). "DNA-Templated Carbon Nanotube Field-Effect Transistor". Science. 302 (6549): 1380–2. Bibcode:2003Sci...302.1380K. CiteSeerX 10

Jürgen P. (2004-5-6). "Prototypical single molecule chemical field effect transistor with nanometer-sized gates". Physical Review Letters. 92 (18).

for engineering and scientific purposes. The metal–oxide–silicon field-effect transistor (MOSFET), also known as the MOS transistor, was invented at Bell

Faggin, F.; Klein, T.; Vadasz, L. (23 October 1968). Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates (JPEG image). International

transatlantic television signal. Mid-1960s: Metal–oxide–semiconductor field-effect transistor (MOSFET) first used for television, by the Radio Corporation of

Pearton SJ, Kang BS, Ren F (2004). "Depletion-mode ZnO nanowire field-effect transistor". Applied Physics Letters. 85 (12): 2274. Bibcode:2004ApPhL..85

computer. Faggin, F., Klein, T., and Vadasz, L.: Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates.Cover and abstract of the

invention of the junction transistor, the analog and the junction field-effect transistor, and the theory underlying their operation. 1981 Sidney Darlington

for the vacuum tubes. 1959 The MOSFET (metal–oxide–semiconductor field-effect transistor) is invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs

field-effect transistor (MOSFET) In 1959, Dawon Kahng and Mohamed Atalla at Bell Labs invented the metal–oxide–semiconductor field-effect transistor (MOSFET)

(1968) A guide to outdoor building (Arthur Barker 1970) 50 (FET) Field Effect Transistor Projects (Babani 1977) How to Make Walkie Talkies (Babani 1977)

cores". Computer History Museum. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04  Mary Bellis (23 Feb 2018). "Who Invented

memory (ROM) and the first commercial metal–oxide–semiconductor field-effect transistor (MOSFET) silicon gate SRAM chip, the 256-bit 1101. While the 1101

chip where the sample is loaded integrated with an ion-sensitive field-effect transistor able to sensitively detect reductions of the pH value due to the

Figure 4: Hydrogen passivation of a Si metal–oxide–semiconductor field-effect transistor (MOSFET) for reduction of Si/SiO2 interface states. Hydrogen bonds

Quality (ITU-T P.800.1) MOSFET – (a) Metal-Oxide-Semiconductor Field-Effect Transistor MOSS – (p) MObile Submarine Simulator – (a) Moving Object Support

Zumbühl, D. M., & Kuhlmann, A. V. (2022). A hole spin qubit in a fin field-effect transistor above 4 kelvin. Nature Electronics, 5(3), 178-183. https://doi

Mohanty and his team demonstrated that their silicon nanowire field effect transistor sensor can detect a number of analytes, relevant in cancer and

Prati, Enrico (2015). "Tunable single hole regime of a silicon field effect transistor in standard CMOS technology". Applied Physics Express. 9 (11):

transistor-based audio power amplifiers use MOSFET (metal–oxide–semiconductor field-effect transistor) devices in their power sections, because their distortion curve

each memory cell resembles a standard metal–oxide–semiconductor field-effect transistor (MOSFET) except that the transistor has two gates instead of one

Egyptian scientist Mostafa El-Sayed. Metal–oxide–semiconductor field-effect transistor (MOSFET): Invented by Egyptian engineer Mohamed M. Atalla with

Enrichment of sc-SWCNTs (DOI: 10.1002/pssa.201431771) Organic Inversion Field Effect Transistor (DOI: 10.1038/ncomms3775) Organic Permeable Base Transistor (OPBT)

Anne M.; Emaminejad, Sam (7 January 2022). "Wearable aptamer-field-effect transistor sensing system for noninvasive cortisol monitoring". Science Advances

Schubert, E.F.; Fischer, A.; Ploog, K. (1986). "The delta-doped field-effect transistor". IEEE Transactions on Electron Devices. ED-33 (5): 625–632. Retrieved

and lunar ascent modules. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon

that is further amplified with a low-noise high electron mobility field effect transistor (HEMT FET) amplifier, and passed to the IF section of the receiver

as the semi-conductive channel in a silicon-silicon oxide based field effect transistor (FET). Based on previous Langmuir DNA kinetics calculations, the

an attenuator rather than an amplifier; it employed a junction field-effect transistor in voltage-controlled resistance mode. These attenuators, which

National Coal Board. James Aubrey Turner, Manager, Microwave Field Effect Transistor Department, Plessey Research (Caswell) Ltd. The Reverend William

times by the same vacuum tube or other active component such as a field effect transistor. A regenerative circuit is often an AM detector, converting the

(SURMOF-2) growth on alumina layer on top of back gated Graphene Field Effect Transistor (GFET) can provide a sensor that is only sensitive to ethanol but

invent.org. June 4, 2024. "NIHF Inductee Dawon Kahng Invented the Field-Effect Transistor". www.invent.org. June 4, 2024. "NIHF Inductee Dov Frohman-Bentchkowsky

rectifier diode in a reverse conducting thyristor, a power switching field effect transistor with its inverse diode) or packaged in a common case (semiconductor

advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989 M. Pitke For technical leadership in the design

2007 Yuhua Cheng for contributions to metal-oxide-semiconductor field-effect transistor modeling and its industry applications in integrated circuit design