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Find link is a tool written by Edward Betts.Longer titles found: Fin field-effect transistor (view), Chemical field-effect transistor (view), Organic field-effect transistor (view), Carbon nanotube field-effect transistor (view), Tunnel field-effect transistor (view), DNA field-effect transistor (view)
searching for field-effect transistor 163 found (536 total)
alternate case: Field-effect transistor
Dawon Kahng
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best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, inRegenerative loop antenna (81 words) [view diff] no match in snippet view article find links to article
this feedback winding in the drain circuit of a JFET (junction field effect transistor). An antenna of this type employing vacuum tubes was constructedVariable-gain amplifier (909 words) [view diff] exact match in snippet view article find links to article
circuit elements that can be produced by using a JFET (junction field-effect transistor) with simple biasing. VCRs manufactured in this way can be obtainedFloating-gate MOSFET (1,731 words) [view diff] exact match in snippet view article find links to article
floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floatingTraffic Service Position System (641 words) [view diff] no match in snippet view article find links to article
developed by Bell Labs similar to core memory) and Insulated Gate Field Effect Transistor solid state memory devices similar to dynamic random access memoryIon semiconductor sequencing (1,460 words) [view diff] exact match in snippet view article find links to article
causes the release of a hydrogen ion that triggers an ion-sensitive field-effect transistor (ISFET) sensor, which indicates that a reaction has occurred. IfSpin transistor (423 words) [view diff] exact match in snippet view article find links to article
sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (namedSelf-aligned gate (3,762 words) [view diff] exact match in snippet view article find links to article
whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regionsImage sensor (3,000 words) [view diff] exact match in snippet view article find links to article
based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation tend to involveGate oxide (593 words) [view diff] exact match in snippet view article find links to article
separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as theOxide thin-film transistor (973 words) [view diff] no match in snippet view article find links to article
metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor (MOSFET) where the word "oxide" refers to the insulating gate dielectric10 nm process (1,955 words) [view diff] exact match in snippet view article find links to article
needed] All production "10 nm" processes are based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planarRobert W. Bower (1,145 words) [view diff] exact match in snippet view article find links to article
known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at14 nm process (2,767 words) [view diff] exact match in snippet view article find links to article
was expected to be "16 nm". All "14 nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planarMulti-level cell (2,305 words) [view diff] exact match in snippet view article find links to article
consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs requiredOpen collector (1,999 words) [view diff] no match in snippet view article find links to article
junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, soHistory of electronic engineering (2,791 words) [view diff] exact match in snippet view article find links to article
chip in 1959, and the silicon MOSFET (metal–oxide–semiconductor field-effect transistor) in 1959. In the UK, the subject of electronics engineering becameModulation doping (331 words) [view diff] exact match in snippet view article find links to article
electrical mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a MODFET. One advantage of modulation doping is that2 nm process (2,512 words) [view diff] exact match in snippet view article find links to article
the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer"Tribotronics (1,045 words) [view diff] exact match in snippet view article find links to article
unit, contact electrification field-effect transistor (CE-FET) composed of a metal–oxide–semiconductor field-effect transistor (MOSFET) without top-gate electrodeGSAT-2 (397 words) [view diff] no match in snippet view article find links to article
directly measured radiation doses using a Radiation Sensitive Field Effect Transistor (RADFET) Surface Charge Monitor (SCM) to indicate the state ofNative transistor (321 words) [view diff] exact match in snippet view article find links to article
transistor (or sometimes natural transistor) is a variety of the MOS field-effect transistor that is intermediate between enhancement and depletion modes. MostPaul Richman (772 words) [view diff] case mismatch in snippet view article find links to article
MOS Field-effect Transistor Structure with Mesa-like Contact and Gate Areas and Selectively Deeper Junctions. Bipolar MOS Field Effect Transistor. MOSBand bending (2,655 words) [view diff] exact match in snippet view article find links to article
examples are the metal-semiconductor field-effect transistor (MESFET) and the junction field-effect transistor (JFET), both of which rely on band bendingOutline of information technology (1,146 words) [view diff] exact match in snippet view article find links to article
transistor (SGT) Power MOSFET Multi-gate field-effect transistor (MuGFET) FinFET (fin field-effect transistor) Thin-film transistor (TFT) Integrated circuitElectronics (3,317 words) [view diff] exact match in snippet view article find links to article
manufactured electronic device is the metal-oxide-semiconductor field-effect transistor (MOSFET), with an estimated 13 sextillion MOSFETs having been manufactured7 nm process (4,729 words) [view diff] exact match in snippet view article find links to article
Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021Cemal Basaran (231 words) [view diff] no match in snippet view article find links to article
the electrostatic doping-based all-graphene nano ribbon runnel field effect transistor, US patent number 10,593,7782. Basaran in 2011 received the AmericanList of acronyms: J (1,386 words) [view diff] case mismatch in snippet view article find links to article
U.S. Joint Forces Command ("jiff-comm") JFET – (i/a) Junction Field-Effect Transistor ("jay-fett") JFHQ-NCR – (i) Joint Force Headquarters National CapitalCarl Frosch (545 words) [view diff] no match in snippet view article find links to article
NPN field effect transistor, 1957Schön scandal (4,008 words) [view diff] case mismatch in snippet view article find links to article
PMID 12416506) J. H. Schön; Ch. Kloc; B. Batlogg (2000). "A Light-Emitting Field-Effect Transistor". Science. 290 (5493): 963–6. Bibcode:2000Sci...290..963S. doi:10Touch switch (668 words) [view diff] no match in snippet view article find links to article
electrodes. Also, an N-channel, enhancement-mode, metal oxide field effect transistor can be used. Its gate can be connected to one of the electrodesContact resistance (1,853 words) [view diff] no match in snippet view article find links to article
Mitsumasa (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". Journal of Physical Chemistry C. 113Frank Wanlass (450 words) [view diff] exact match in snippet view article find links to article
1967. In 1963, while studying MOSFET (metal–oxide–semiconductor field-effect transistor) structures, he noted the movement of charge through oxide ontoTsu-Jae King Liu (1,417 words) [view diff] exact match in snippet view article find links to article
the co-inventor of the three-dimensional FinFET transistor (fin field-effect transistor) which is the design that is used in all leading microprocessorList of semiconductor scale examples (6,003 words) [view diff] exact match in snippet view article find links to article
semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing processElectronic switch (662 words) [view diff] exact match in snippet view article find links to article
electronic switch in digital circuits is the metal–oxide–semiconductor field-effect transistor (MOSFET). The analogue switch uses two MOSFET transistors in aMetal gate (752 words) [view diff] exact match in snippet view article find links to article
the name remained. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959Electrical engineering (8,270 words) [view diff] exact match in snippet view article find links to article
Fairchild Semiconductor in 1959. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed Atalla and Dawon KahngRobert H. Dennard (775 words) [view diff] exact match in snippet view article find links to article
IBM. Retrieved August 19, 2024. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04 "DRAM Market Size, Share, Trends, GrowthVideo camera (1,395 words) [view diff] exact match in snippet view article find links to article
technology, which originates from the invention of the MOSFET (MOS field-effect transistor) at Bell Labs in 1959. This led to the development of semiconductorQuantum point contact (2,031 words) [view diff] exact match in snippet view article find links to article
configuration of QPCs is used for demonstrating a fully ballistic field-effect transistor. Another application of the device is its use as a switch. A nickelBandwidth (computing) (1,250 words) [view diff] exact match in snippet view article
personal area networks. The MOSFET (metal–oxide–semiconductor field-effect transistor) is the most important factor enabling the rapid increase in bandwidthGamma (disambiguation) (647 words) [view diff] exact match in snippet view article
(γ) Surface tension (γ) Body effect (γ), on threshold voltage in field-effect transistor technology Christoffel symbols (Γ), in general relativity CirculationRadio-frequency engineering (741 words) [view diff] exact match in snippet view article find links to article
power Digital radio RF power amplifiers Metal–oxide–semiconductor field-effect transistor (MOSFET)s: Power MOSFET, Laterally-diffused metal-oxide semiconductorGhavam Shahidi (838 words) [view diff] exact match in snippet view article find links to article
Antoniadis. A 60 nanometer silicon MOSFET (metal–oxide–semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith atElectromechanics (1,931 words) [view diff] exact match in snippet view article find links to article
at Fairchild Semiconductor, and the metal–oxide–semiconductor field-effect transistor (MOSFET) invented at Bell Labs between 1955 and 1960, after FroschBiasing (1,350 words) [view diff] exact match in snippet view article find links to article
voltages. Electret microphone elements typically include a junction field-effect transistor as an impedance converter to drive other electronics within a fewRobert Arns (171 words) [view diff] exact match in snippet view article find links to article
other transistor: early history of the metal-oxide-semiconductor field-effect transistor," Engineering Science and Education Journal, 7, No. 5 (OctoberInterplanetary Monitoring Platform (608 words) [view diff] exact match in snippet view article find links to article
for the Apollo program. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was adopted by NASA for the IMP program inDigital signal (1,552 words) [view diff] exact match in snippet view article find links to article
circuits are typically generated by metal–oxide–semiconductor field-effect transistor (MOSFET) devices, due to their rapid on–off electronic switchingDosimeter (1,521 words) [view diff] exact match in snippet view article find links to article
and thereby re-used multiple times. Metal–oxide–semiconductor field-effect transistor dosimeters are now used as clinical dosimeters for radiotherapyZirconium dioxide (2,067 words) [view diff] no match in snippet view article find links to article
vapor deposition of zirconium oxide for metal–oxide–semiconductor field effect transistor application". Journal of Vacuum Science and Technology B. 19 (5):History of electrical engineering (4,661 words) [view diff] exact match in snippet view article find links to article
Wiley. p. 1. ISBN 9780471828679. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scaleSilicon on sapphire (1,165 words) [view diff] exact match in snippet view article find links to article
and P.H. Robinson fabricated a MOSFET (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories. SOSGermanane (513 words) [view diff] no match in snippet view article find links to article
the University of Ioannina in Greece, have reported on the first field effect transistor fabricated with germanane, highlighting its promising electronicZeynep Çelik-Butler (526 words) [view diff] exact match in snippet view article find links to article
McWhorter Noise Model and applied to metal–oxide–semiconductor field-effect transistor (MOSFETs). Most recently, the same model has been revised to accountIgor Tamm (1,327 words) [view diff] exact match in snippet view article find links to article
states. This concept is important for metal–oxide–semiconductor field-effect transistor (MOSFET) physics. In 1934, Tamm and Semen Altshuller suggestedStrongly correlated material (1,105 words) [view diff] no match in snippet view article find links to article
potentially be used to make transistors that would use conventional field effect transistor configurations to take advantage of the material's sharp changeSuzhou Oriental Semiconductor (158 words) [view diff] exact match in snippet view article find links to article
2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013. Wang, P.-F.; Lin, X.; LiuMixed-signal integrated circuit (2,753 words) [view diff] exact match in snippet view article find links to article
the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the AdvancedAmorphous solid (2,917 words) [view diff] exact match in snippet view article find links to article
isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor (MOSFET). Also, hydrogenated amorphous silicon (Si:H) is of technicalTime of flight (2,048 words) [view diff] no match in snippet view article find links to article
Manaka; M. Iwamot (2009). "Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method". J. Phys. Chem. C. 113 (43): 18459University of Twente (1,476 words) [view diff] exact match in snippet view article find links to article
Development, Uganda Piet Bergveld, inventor of the ion-sensitive field-effect transistor (ISFET) sensor "Facts and Figures from 2020". Archived from theSilicon-tin (1,009 words) [view diff] exact match in snippet view article find links to article
of tin in silicon. The first MOSFET (metal–oxide–semiconductor field-effect transistor) using SiSn as a channel material was shown in 2013. This studyWilliam Gosling (engineer) (368 words) [view diff] no match in snippet view article
1962. The design of engineering systems. New York, Wiley 1964. Field effect transistor applications. New York, Wiley 1965. Mechanical system design. WithTelephony (2,909 words) [view diff] exact match in snippet view article find links to article
was enabled by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET), which led to the rapid development and wide adoptionProgrammable logic device (2,467 words) [view diff] exact match in snippet view article find links to article
circuit. An EPROM memory cell is a MOSFET (metal-oxide semiconductor field-effect transistor, or MOS transistor) that can be switched on by trapping an electricIBM Simon (1,712 words) [view diff] exact match in snippet view article find links to article
its demise. With advances in MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology enabling smaller integrated circuitList of fellows of IEEE Electron Devices Society (69 words) [view diff] no match in snippet view article find links to article
advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989 Krishna Saraswat For contributions to metallizationSilicon on insulator (1,979 words) [view diff] exact match in snippet view article find links to article
alternative to FinFETs. An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as siliconAudio power amplifier (2,046 words) [view diff] exact match in snippet view article find links to article
bipolar junction transistor (BJT) and the metal–oxide–semiconductor field-effect transistor (MOSFET). Transistor-based amplifiers are lighter in weight, moreTraitorous eight (5,030 words) [view diff] no match in snippet view article find links to article
production, and five employees, led by Noyce, continued the work on a field effect transistor for Beckman Instruments. Shockley refused to work on bipolar transistorsSupriyo Datta (1,278 words) [view diff] no match in snippet view article find links to article
Kumar (2021-10-01). "A review on emerging negative capacitance field effect transistor for low power electronics". Microelectronics Journal. 116: 105242Carlos Paz de Araújo (465 words) [view diff] case mismatch in snippet view article find links to article
Patent Application for FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR Patent Application (Application #20220199631 issued June 23, 2022)Utimaco Atalla (1,670 words) [view diff] exact match in snippet view article find links to article
Atalla, the inventor of the MOSFET (metal–oxide–semiconductor field-effect transistor). In 1972, Atalla filed U.S. patent 3,938,091 for a remote PINFranklin Institute Awards (679 words) [view diff] exact match in snippet view article find links to article
technology, and for the development of the MOS insulated gate, field-effect transistor. "Martin Mohamed Atalla". Franklin Institute Awards. The FranklinMicrobolometer (1,827 words) [view diff] no match in snippet view article find links to article
used a thin film transistor (TFT), which is a special kind of field effect transistor. The main change in these devices would be the addition of a gateSpintronics (3,333 words) [view diff] no match in snippet view article find links to article
for spintronics began with the theoretical proposal of a spin field-effect-transistor by Datta and Das in 1990 and of the electric dipole spin resonanceTransistor radio (2,951 words) [view diff] exact match in snippet view article find links to article
other transistor: early history of the metal–oxide–semiconductor field-effect transistor" (PDF). Engineering Science and Education Journal. 7 (5): 233–240List of electrical engineers (38 words) [view diff] exact match in snippet view article find links to article
Re-formulated Maxwell's equations (vector calculus) Oskar Heil Field-effect transistor, loudspeaker Heinrich Rudolf Hertz Hertzian waves Peter CooperClass-D amplifier (2,069 words) [view diff] exact match in snippet view article find links to article
development of silicon-based MOSFET (metal–oxide–semiconductor field-effect transistor) technology. In 1978, Sony introduced the TA-N88, the first class-DExplorer 33 (2,754 words) [view diff] exact match in snippet view article find links to article
first spacecraft to use the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), which was adopted by NASA for the IMP programLeland Clark (811 words) [view diff] case mismatch in snippet view article find links to article
Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence TechnologyComputer engineering (2,988 words) [view diff] exact match in snippet view article find links to article
Fairchild Semiconductor in 1959, the metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) demonstrated by a team at Bell LabsElectron beam-induced current (1,085 words) [view diff] case mismatch in snippet view article find links to article
(20 April 2009). "Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack". Japanese Journal ofKenneth L Shepard (1,656 words) [view diff] exact match in snippet view article find links to article
graphene, in electronic devices. This included seminal papers on field-effect transistor operation in graphene, on using boron nitride as a gate dielectricHot-carrier injection (1,785 words) [view diff] exact match in snippet view article find links to article
circuits (ICs) have driven the associated Metal–Oxide–Semiconductor field-effect transistor (MOSFET) to scale to smaller dimensions. However, it has not beenComputer memory (3,284 words) [view diff] exact match in snippet view article find links to article
the late 1960s. The invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) enabled the practical use of metal–oxide–semiconductorBijan Davari (1,011 words) [view diff] exact match in snippet view article find links to article
Davari worked on ways to improve MOSFET (metal–oxide–semiconductor field-effect transistor) and CMOS (complementary metal–oxide–semiconductor) technologyFlat-panel display (2,518 words) [view diff] exact match in snippet view article find links to article
of Plasma Display Panels. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and DawonNational Semiconductor (2,884 words) [view diff] exact match in snippet view article find links to article
(transistor–transistor logic) and MOSFET (metal–oxide–semiconductor field-effect transistor) integrated circuit technologies. As they had while employed inYamazaki-Teiichi Prize (1,304 words) [view diff] no match in snippet view article find links to article
Electrical detection of biomolecular recognition using genetic field effect transistor and its application to genetic analyses. 2007 - Takeshi HasegawaElectric power industry (3,097 words) [view diff] exact match in snippet view article find links to article
came with the invention of the MOSFET (metal-oxide-semiconductor field-effect transistor) in 1959. Generations of MOSFETs enabled power designers to achieveSufi Zafar (275 words) [view diff] no match in snippet view article find links to article
contributions to CMOS-compatible biosensors and high permittivity field effect transistor reliability models". In 2021 she received the 2021 FIAP CareerChih-Tang Sah (1,396 words) [view diff] exact match in snippet view article find links to article
circuit production. After the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was first demonstrated by Mohamed Atalla andMuhammad M. Hussain (666 words) [view diff] no match in snippet view article find links to article
P.; Hussain, Muhammad M. (12 October 2011). "Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance OperationMitiko Miura-Mattausch (225 words) [view diff] no match in snippet view article find links to article
2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling". Miura-Mattausch is the author or editor of:RF Micropower (659 words) [view diff] no match in snippet view article find links to article
Applications of RF Micropower's Si-MESFET (metal-semiconductor field-effect-transistor) technology in linear and switching regulators for radiation environmentsBich-Yen Nguyen (355 words) [view diff] exact match in snippet view article find links to article
there included the development of the multiple-independent-gate field-effect transistor (MIGFET), as well as CMOS technology. As head of advanced transistorLED circuit (2,467 words) [view diff] exact match in snippet view article find links to article
regulated using a depletion-mode MOSFET (metal–oxide–semiconductor field-effect transistor), which is the simplest current limiter. Low drop-out (LDO) constantDebye length (2,717 words) [view diff] no match in snippet view article find links to article
(2007-11-01). "Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors". Nano Letters. 7 (11): 3405–3409. Bibcode:2007NanoL..Harvey Prize (277 words) [view diff] exact match in snippet view article find links to article
used in the miniaturization of MOSFET (metal oxide semiconductor field-effect transistor) integrated circuits. 1991 Jacques-Louis Lions France CreatingDirection finding (10,445 words) [view diff] exact match in snippet view article find links to article
oxide semiconductor field effect transistor (MOSFET). Others followed, for example, the metal-semiconductor field-effect transistor and the high electronSingle-atom transistor (557 words) [view diff] exact match in snippet view article find links to article
four and six individually implanted As or P atoms. QFET (quantum field-effect transistor) Xie, F.-Q.; Nittler, L.; Obermair, Ch.; Schimmel, Th. (2004-09-15)Frequency multiplier (1,756 words) [view diff] exact match in snippet view article find links to article
Sheng; Peng, Lian-Mao (2010). "A high-performance top-gate graphene field-effect transistor based frequency doubler". Applied Physics Letters. 96 (17): 173104Plate detector (radio) (1,297 words) [view diff] no match in snippet view article
Detector". An example schematic diagram of an implementation using a field effect transistor is shown. As with the standard plate detector, the device is biasedSemiconductor memory (3,606 words) [view diff] exact match in snippet view article find links to article
memory) – This uses memory cells consisting of one MOSFET (MOS field-effect transistor) and one MOS capacitor to store each bit. This type of RAM is thePaolo Samorì (1,358 words) [view diff] exact match in snippet view article find links to article
photochromic systems it is possible to fabricate optically switchable field-effect transistor as a first step towards multifunctional devices. Such researchCurrent source (4,196 words) [view diff] exact match in snippet view article find links to article
an enhancement-mode N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) could be used instead of a JFET in the circuits listed below forLSK489 (645 words) [view diff] exact match in snippet view article find links to article
Monolithic N-Channel junction-gate field-effect transistorRemote control (4,454 words) [view diff] exact match in snippet view article find links to article
control that uses digital signals and metal–oxide–semiconductor field-effect transistor (MOSFET) memory. This was widely adopted for color television,History of telecommunication (5,528 words) [view diff] exact match in snippet view article find links to article
to digital RF technology. Advances in metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) technology, the key component of theDigital image processing (5,184 words) [view diff] exact match in snippet view article find links to article
Wiley. p. 1. ISBN 978-0-471-82867-9. The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scaleHistory of the telephone (6,295 words) [view diff] exact match in snippet view article find links to article
enabled by metal–oxide–semiconductor (MOS) technology. The MOS field-effect transistor (MOSFET) was invented by Mohamed M. Atalla and Dawon Kahng at BellRead-only memory (5,573 words) [view diff] exact match in snippet view article find links to article
designers' convenience. The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, enabled the practicalRandom-access memory (5,942 words) [view diff] exact match in snippet view article find links to article
Needs". Computer History Museum. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04 "IBM Archives -- FAQ's for ProductsMassood Tabib-Azar (878 words) [view diff] no match in snippet view article find links to article
Tabib-Azar, Massood (2013). "Operation principles of micro-plasma field effect transistor". 2013 Transducers & Eurosensors XXVII: The 17th InternationalCarbon peapod (1,427 words) [view diff] no match in snippet view article find links to article
Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor". Japanese Journal of Applied Physics. 42: 5392–5394. Bibcode:2003JaJAPAsad Abidi (1,493 words) [view diff] exact match in snippet view article find links to article
the development of sub-micron MOSFET (metal–oxide–semiconductor field-effect transistor) VLSI (very large-scale integration) technology at the AdvancedNanochemistry (4,397 words) [view diff] exact match in snippet view article find links to article
detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor". Nature Nanotechnology. 6 (2): 126–132. Bibcode:2011NatNa...6Gerhard Klimeck (1,298 words) [view diff] case mismatch in snippet view article find links to article
generating a memory cell U.S. Patent 2012/0043,607: Tunneling Field-Effect Transistor with Low Leakage Current U.S. patent No. 9,858,365: “Physical modelingDaniel M. Fleetwood (1,051 words) [view diff] no match in snippet view article find links to article
based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory). This chip was also recognized as Discover magazine's 1998Daniel M. Fleetwood (1,051 words) [view diff] no match in snippet view article find links to article
based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory). This chip was also recognized as Discover magazine's 1998Zhong Lin Wang (2,852 words) [view diff] case mismatch in snippet view article find links to article
Changbao; Wang, Zhong Lin (2014-08-26). "Contact Electrification Field-Effect Transistor". ACS Nano. 8 (8): 8702–8709. doi:10.1021/nn5039806. ISSN 1936-0851Advanced Linear Devices (1,242 words) [view diff] no match in snippet view article find links to article
threshold voltage. ALD optimizes the Metal Oxide Semiconductor Field Effect Transistor, or MOSFET, which can be used to build low-voltage, low-power,Molecular models of DNA (3,740 words) [view diff] case mismatch in snippet view article find links to article
Sivan; Erez Braun (November 2003). "DNA-Templated Carbon Nanotube Field-Effect Transistor". Science. 302 (6549): 1380–2. Bibcode:2003Sci...302.1380K. CiteSeerX 10Jürgen P. Rabe (1,991 words) [view diff] no match in snippet view article find links to article
Jürgen P. (2004-5-6). "Prototypical single molecule chemical field effect transistor with nanometer-sized gates". Physical Review Letters. 92 (18).Power semiconductor device (3,292 words) [view diff] no match in snippet view article find links to article
exist, such as the bipolar junction transistor, the vertical MOS field effect transistor, and others. Power levels for individual amplifier devices rangeHistory of computing (6,591 words) [view diff] exact match in snippet view article find links to article
for engineering and scientific purposes. The metal–oxide–silicon field-effect transistor (MOSFET), also known as the MOS transistor, was invented at BellHistory of radio (8,427 words) [view diff] exact match in snippet view article find links to article
transatlantic television signal. Mid-1960s: Metal–oxide–semiconductor field-effect transistor (MOSFET) first used for television, by the Radio Corporation ofMicroprocessor (9,788 words) [view diff] no match in snippet view article find links to article
Faggin, F.; Klein, T.; Vadasz, L. (23 October 1968). Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates (JPEG image). InternationalZinc oxide (8,506 words) [view diff] exact match in snippet view article find links to article
Pearton SJ, Kang BS, Ren F (2004). "Depletion-mode ZnO nanowire field-effect transistor". Applied Physics Letters. 85 (12): 2274. Bibcode:2004ApPhL..85Intel 4004 (6,794 words) [view diff] no match in snippet view article find links to article
computer. Faggin, F., Klein, T., and Vadasz, L.: Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates.Cover and abstract of theSwitched-mode power supply (5,664 words) [view diff] exact match in snippet view article find links to article
for the vacuum tubes. 1959 The MOSFET (metal–oxide–semiconductor field-effect transistor) is invented by Mohamed M. Atalla and Dawon Kahng at Bell LabsBell Labs (12,083 words) [view diff] exact match in snippet view article find links to article
invention of the junction transistor, the analog and the junction field-effect transistor, and the theory underlying their operation. 1981 Sidney DarlingtonList of Korean inventions and discoveries (16,290 words) [view diff] exact match in snippet view article find links to article
field-effect transistor (MOSFET) In 1959, Dawon Kahng and Mohamed Atalla at Bell Labs invented the metal–oxide–semiconductor field-effect transistor (MOSFET)Francis G. Rayer (803 words) [view diff] no match in snippet view article find links to article
(1968) A guide to outdoor building (Arthur Barker 1970) 50 (FET) Field Effect Transistor Projects (Babani 1977) How to Make Walkie Talkies (Babani 1977)Dynamic random-access memory (10,689 words) [view diff] exact match in snippet view article find links to article
cores". Computer History Museum. US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 1968-06-04 Mary Bellis (23 Feb 2018). "Who InventedSmall RNA sequencing (2,056 words) [view diff] exact match in snippet view article find links to article
chip where the sample is loaded integrated with an ion-sensitive field-effect transistor able to sensitively detect reductions of the pH value due to theIntel (24,014 words) [view diff] exact match in snippet view article find links to article
memory (ROM) and the first commercial metal–oxide–semiconductor field-effect transistor (MOSFET) silicon gate SRAM chip, the 256-bit 1101. While the 1101List of acronyms: M (4,619 words) [view diff] case mismatch in snippet view article find links to article
Quality (ITU-T P.800.1) MOSFET – (a) Metal-Oxide-Semiconductor Field-Effect Transistor MOSS – (p) MObile Submarine Simulator – (a) Moving Object SupportCarrier scattering (3,188 words) [view diff] exact match in snippet view article find links to article
Figure 4: Hydrogen passivation of a Si metal–oxide–semiconductor field-effect transistor (MOSFET) for reduction of Si/SiO2 interface states. Hydrogen bondsDominik Zumbühl (736 words) [view diff] exact match in snippet view article find links to article
Zumbühl, D. M., & Kuhlmann, A. V. (2022). A hole spin qubit in a fin field-effect transistor above 4 kelvin. Nature Electronics, 5(3), 178-183. https://doiRaj Mohanty (1,779 words) [view diff] no match in snippet view article find links to article
Mohanty and his team demonstrated that their silicon nanowire field effect transistor sensor can detect a number of analytes, relevant in cancer andTube sound (5,688 words) [view diff] exact match in snippet view article find links to article
transistor-based audio power amplifiers use MOSFET (metal–oxide–semiconductor field-effect transistor) devices in their power sections, because their distortion curveQuantum dot (13,191 words) [view diff] no match in snippet view article find links to article
Prati, Enrico (2015). "Tunable single hole regime of a silicon field effect transistor in standard CMOS technology". Applied Physics Express. 9 (11):List of Egyptian inventions and discoveries (17,995 words) [view diff] exact match in snippet view article find links to article
Egyptian scientist Mostafa El-Sayed. Metal–oxide–semiconductor field-effect transistor (MOSFET): Invented by Egyptian engineer Mohamed M. Atalla withFlash memory (17,256 words) [view diff] exact match in snippet view article find links to article
each memory cell resembles a standard metal–oxide–semiconductor field-effect transistor (MOSFET) except that the transistor has two gates instead of oneCenter for Advancing Electronics Dresden (2,017 words) [view diff] no match in snippet view article find links to article
Enrichment of sc-SWCNTs (DOI: 10.1002/pssa.201431771) Organic Inversion Field Effect Transistor (DOI: 10.1038/ncomms3775) Organic Permeable Base Transistor (OPBT)E. Fred Schubert (1,328 words) [view diff] exact match in snippet view article find links to article
Schubert, E.F.; Fischer, A.; Ploog, K. (1986). "The delta-doped field-effect transistor". IEEE Transactions on Electron Devices. ED-33 (5): 625–632. RetrievedWearable technology (11,969 words) [view diff] exact match in snippet view article find links to article
Anne M.; Emaminejad, Sam (7 January 2022). "Wearable aptamer-field-effect transistor sensing system for noninvasive cortisol monitoring". Science AdvancesHistory of computing hardware (17,687 words) [view diff] exact match in snippet view article find links to article
and lunar ascent modules. The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and DawonCfA 1.2 m Millimeter-Wave Telescope (3,760 words) [view diff] no match in snippet view article find links to article
that is further amplified with a low-noise high electron mobility field effect transistor (HEMT FET) amplifier, and passed to the IF section of the receiverCarbon nanotubes in medicine (3,856 words) [view diff] no match in snippet view article find links to article
as the semi-conductive channel in a silicon-silicon oxide based field effect transistor (FET). Based on previous Langmuir DNA kinetics calculations, theBlackmer gain cell (3,831 words) [view diff] exact match in snippet view article find links to article
an attenuator rather than an amplifier; it employed a junction field-effect transistor in voltage-controlled resistance mode. These attenuators, which1981 Birthday Honours (17,641 words) [view diff] no match in snippet view article find links to article
National Coal Board. James Aubrey Turner, Manager, Microwave Field Effect Transistor Department, Plessey Research (Caswell) Ltd. The Reverend WilliamTimeline of United States inventions (1890–1945) (25,344 words) [view diff] no match in snippet view article
times by the same vacuum tube or other active component such as a field effect transistor. A regenerative circuit is often an AM detector, converting theMetal–organic framework (21,470 words) [view diff] no match in snippet view article find links to article
(SURMOF-2) growth on alumina layer on top of back gated Graphene Field Effect Transistor (GFET) can provide a sensor that is only sensitive to ethanol butList of National Inventors Hall of Fame inductees (14,627 words) [view diff] case mismatch in snippet view article find links to article
invent.org. June 4, 2024. "NIHF Inductee Dawon Kahng Invented the Field-Effect Transistor". www.invent.org. June 4, 2024. "NIHF Inductee Dov Frohman-BentchkowskyGlossary of power electronics (6,500 words) [view diff] no match in snippet view article find links to article
rectifier diode in a reverse conducting thyristor, a power switching field effect transistor with its inverse diode) or packaged in a common case (semiconductorList of fellows of IEEE Communications Society (86 words) [view diff] no match in snippet view article find links to article
advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989 M. Pitke For technical leadership in the designList of fellows of IEEE Solid-State Circuits Society (81 words) [view diff] exact match in snippet view article find links to article
2007 Yuhua Cheng for contributions to metal-oxide-semiconductor field-effect transistor modeling and its industry applications in integrated circuit design