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searching for resistive random-access memory 8 found (18 total)

alternate case: Resistive random-access memory

Spin-transfer torque (995 words) [view diff] no match in snippet view article find links to article

Spin-transfer torque (STT) is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction or spin valve can be modified using

Universal memory (508 words) [view diff] exact match in snippet view article find links to article

phase-change memory (PCM) programmable metallization cell (PMC) resistive random-access memory (RRAM) nano-RAM memristor-based memory Since each memory has

Themis Prodromakis (679 words) [view diff] exact match in snippet view article find links to article

technologies. He has been involved in developing emerging metal-oxide resistive random-access memory technologies with applications in embedded electronics. and

Regius Professor of Engineering (Edinburgh) (1,224 words) [view diff] case mismatch in snippet view article

Institute of Physics. His work focuses on developing metal-oxide Resistive Random-Access Memory technologies and related applications and is leading an interdisciplinary

KAIST (3,018 words) [view diff] no match in snippet view article find links to article

technology Gweng-su Rhim, developed next generation Transparent Resistive Random Access Memory (TRRAM) Seung-man Yang, developed new photonics crystal-based

Oxonickelates (1,837 words) [view diff] no match in snippet view article find links to article

Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory". Materials. 8 (10): 7191–7198. Bibcode:2015Mate....8.7191L

List of Korean inventions and discoveries (16,212 words) [view diff] no match in snippet view article find links to article

a capacitive touchscreen. Transparent resistive random access memory Transparent resistive random access memory (TRRAM) is the world's first transparent

Conductive atomic force microscopy (5,491 words) [view diff] no match in snippet view article find links to article

boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures". Applied Physics Letters. 100 (12): 123508. Bibcode:2012ApPhL