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searching for Schottky barrier 48 found (84 total)

Intersil ICL8038 (229 words) [view diff] exact match in snippet view article find links to article

triangular waveforms, based on bipolar monolithic technology involving Schottky barrier diodes. ICL8038 was a voltage-controlled oscillator: 434 capable of

Man Singh Tyagi (593 words) [view diff] exact match in snippet view article find links to article

ISBN 0-471-60560-3 Physics of Schottky Barrier Junction (first chapter in book Metal-semiconductor Schottky barrier junctions and their applications

Lisa M. Porter (619 words) [view diff] exact match in snippet view article find links to article

microstructure, and electrical properties and their relationships to the Schottky barrier heights at interfaces between metals and single crystalline, N-type

Slotted line (2,886 words) [view diff] exact match in snippet view article find links to article

detector, which uses either a point contact crystal rectifier or a Schottky barrier diode. The right-hand end of the slotted line is terminated in a matched

Akbar Adibi (885 words) [view diff] case mismatch in snippet view article find links to article

completed his PhD degree, in 1977, and his dissertation title was Schottky Barrier Solar Cells. Akbar Adibi's academic career started at Tehran Polytechnic

Michael Duryea Williams (873 words) [view diff] case mismatch in snippet view article find links to article

Chemical Reactivity and Charge Transfer on Gallium-Arsenide (110) Schottky Barrier Formation." His doctoral advisor was William E. Spicer and he received

Marchywka effect (1,945 words) [view diff] exact match in snippet view article find links to article

and Schottky barrier Baumann, PK; Nemanich, RJ (1996). "Characterization of cobalt-diamond (100) interfaces: electron affinity and Schottky barrier". Applied

Zinc cadmium phosphide arsenide (688 words) [view diff] exact match in snippet view article find links to article

ISSN 0003-6951. Bhushan, M.; Catalano, A. (1981). "Polycrystalline Zn3P2 Schottky barrier solar cells". Applied Physics Letters. 38 (1): 39–41. Bibcode:1981ApPhL

George Edward Alcorn Jr. (600 words) [view diff] exact match in snippet view article find links to article

9/18/1984, Imaging X-ray spectrometer #4,543,442, 9/24/1985, GaAs Schottky barrier photo-responsive device and method of fabrication #4,618,380, 10/21/1986

Programmer (hardware) (1,224 words) [view diff] case mismatch in snippet view article

Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory". IEEE Electron Device

Tungsten diselenide (1,356 words) [view diff] case mismatch in snippet view article find links to article

"Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors". ACS Nano. 11 (2): 1626–1632. doi:10.1021/acsnano.6b07360

Yaesu FT-77 (S) (512 words) [view diff] exact match in snippet view article

delivered to the IF unit and AF amplifier. The receiver front end uses Schottky barrier diodes which results in good performance in the presence of strong

Hiroyuki Matsunami (1,280 words) [view diff] exact match in snippet view article find links to article

In 1995, Matsunami demonstrated high-voltage, low power loss SiC Schottky barrier diodes (SBDs), followed by the introduction of high-performance SiC

Nan Marie Jokerst (191 words) [view diff] exact match in snippet view article find links to article

University Thesis Nonlinear optical absorption in single heterostructure Schottky barrier epitaxial structures (1989) Doctoral advisor Elsa M. Garmire Website

Timir Datta (849 words) [view diff] no match in snippet view article find links to article

coupled plasmas, Physical Review A 12 (3), 1125 T Datta, M Silver Schottky‐barrier profile in a‐silicon alloys Applied Physics Letters 38 (11), 903-905

Warren P. Waters (1,075 words) [view diff] case mismatch in snippet view article find links to article

filed July 8, 1965, issued Oct. 26, 1971 U.S. patent 3,651,384 Planar Schottky Barrier, filed March 8, 1971, issued Mar. 21, 1972 U.S. patent 3,836,991 Semiconductor

Bascom S. Deaver (633 words) [view diff] no match in snippet view article find links to article

"Fixed-tuned submillimeter wavelength waveguide mixers using planar Schottky-barrier diodes". IEEE Transactions on Microwave Theory and Techniques. 45 (5):

Sputtering (3,173 words) [view diff] no match in snippet view article find links to article

damage-related interface gap states, resulting in the formation of Schottky-barrier impeding carrier transport. Sputter damage can also impair the doping

David Carroll (physicist) (968 words) [view diff] no match in snippet view article

Carroll, D. L.; Wagner, M.; Rühle, M.; Bonnell, D. A. (1997-04-15). "Schottky-barrier formation at nanoscale metal-oxide interfaces". Physical Review B.

David Carroll (physicist) (968 words) [view diff] no match in snippet view article

Carroll, D. L.; Wagner, M.; Rühle, M.; Bonnell, D. A. (1997-04-15). "Schottky-barrier formation at nanoscale metal-oxide interfaces". Physical Review B.

Band offset (1,381 words) [view diff] exact match in snippet view article find links to article

Fermi level, and predicting or measuring this level is related to the Schottky barrier height in metal-semiconductor interfaces. Depending on the doping of

Alan MacDiarmid (2,314 words) [view diff] case mismatch in snippet view article find links to article

Energy Systems Based on Polyacetylene: Rechargeable Batteries and Schottky Barrier Solar Cells. Final Report, March 1, 1981 – February 29, 1984, University

Arokia Nathan (532 words) [view diff] no match in snippet view article find links to article

2016. Lee, Sungsik; Nathan, Arokia (October 21, 2016). "Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain"

Michael H. Hecht (1,336 words) [view diff] exact match in snippet view article find links to article

H. (1990-07-01). "Photovoltaic effects in photoemission studies of Schottky barrier formation". Journal of Vacuum Science & Technology B: Microelectronics

Thermionic emission (3,377 words) [view diff] exact match in snippet view article find links to article

C. R. (1965). "The Richardson constant for thermionic emission in Schottky barrier diodes". Solid-State Electronics. 8 (4): 395–399. Bibcode:1965SSEle

Ehsan Afshari (1,249 words) [view diff] no match in snippet view article find links to article

E., & Kenneth, O. (2012). 280 GHz and 860 GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS. 2012 IEEE International Solid-State

Gallium nitride (3,688 words) [view diff] exact match in snippet view article find links to article

2008 these can be formed on a silicon substrate. High-voltage (800 V) Schottky barrier diodes (SBDs) have also been made. The higher efficiency and high power

Diode (7,328 words) [view diff] exact match in snippet view article find links to article

welded contact type. Non-welded contact construction utilizes the Schottky barrier principle. The metal side is the pointed end of a small diameter wire

Lin Lanying (4,715 words) [view diff] exact match in snippet view article find links to article

heterostructure Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer Backgating and Light Sensitivity in GaAs Metal-Semiconductor

Standing wave ratio (4,300 words) [view diff] exact match in snippet view article find links to article

rectified by either a point contact diode (crystal rectifier) or a Schottky barrier diode that is incorporated in the detector. These detectors have a

Indium gallium arsenide (3,771 words) [view diff] exact match in snippet view article find links to article

2156–2158. doi:10.1063/1.104991. ISSN 0003-6951. Veteran, J.L. (1982). "Schottky barrier measurements on p-type In0.53Ga0.47As". Thin Solid Films. 97 (2): 187–190

Zhong Lin Wang (3,470 words) [view diff] exact match in snippet view article find links to article

can be produced due to the ion polarization. For a ZnO nanowire, the Schottky barrier height between the nanowire and its metal contact can be effectively

Silicon carbide (7,288 words) [view diff] exact match in snippet view article find links to article

as low as 25 mΩ. Beside SiC switches and SiC Schottky diodes (also Schottky barrier diode, SBD) in the popular TO-247 and TO-220 packages, companies started

History of the transistor (7,310 words) [view diff] exact match in snippet view article find links to article

ISSN 0036-8733. JSTOR 24923169. C. A. Mead (February 1966). "Schottky barrier gate field effect transistor" (PDF). Proceedings of the IEEE. 54 (2):

Metal assisted chemical etching (2,215 words) [view diff] case mismatch in snippet view article find links to article

Hymel, Thomas M.; Narasimhan, Vijay K.; Cui, Yi (13 April 2016). "Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon"

TD-2 (3,393 words) [view diff] exact match in snippet view article find links to article

travelling-wave tube. The receiver had far less noise, through the use of Schottky barrier diodes and tunnel diodes, allowing the number of telephone channels

James R. Biard (7,185 words) [view diff] no match in snippet view article find links to article

which consisted of a transistor and an internal metal-semiconductor Schottky-barrier diode. The patent was filed based on Schottky Clamped DTL monolithic

Resistive random-access memory (6,177 words) [view diff] exact match in snippet view article find links to article

layer. The change of O content results in resistance change as well as Schottky barrier change. More recently, a Ta2O5/TaOx layer was implemented, which still

Plasmonic solar cell (6,030 words) [view diff] exact match in snippet view article find links to article

S2CID 125556930. Tong; et al. (2014-01-10). "Plasmonic-enhanced Si Schottky barrier solar cells". Solar Energy Materials and Solar Cells. 120: 591–595

Intel (23,989 words) [view diff] no match in snippet view article find links to article

the original on June 29, 2012. Retrieved September 19, 2007. 1969 – Schottky-Barrier Diode Doubles the Speed of TTL Memory & Logic Archived October 4, 2011

Crystal detector (8,495 words) [view diff] exact match in snippet view article find links to article

crude unstable point-contact metal–semiconductor junction, forming a Schottky barrier diode. The wire whisker is the anode, and the crystal is the cathode;

Eicke Weber (1,347 words) [view diff] case mismatch in snippet view article find links to article

Mahowald, K. Miyano, I. Lindau: The Advanced Unified Defect Model for Schottky Barrier Formation, in: J. Vac. Sci. Techn. B 6, 1245 (1988). with K. Khachaturyan

Potential applications of graphene (15,190 words) [view diff] exact match in snippet view article find links to article

2017). "A performance optimization and analysis of graphene based schottky barrier GaAs solar cell". IOP Conference Series: Materials Science and Engineering

Organic solar cell (13,566 words) [view diff] no match in snippet view article find links to article

"Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky-barrier cells". J. Appl. Phys. 45 (1): 230–236. Bibcode:1974JAP....45..230G

Radio receiver (16,571 words) [view diff] exact match in snippet view article find links to article

adjustable arm. The resulting crude semiconductor junction functioned as a Schottky barrier diode, conducting in only one direction. Only particular sites on the

Mott–Schottky plot (1,012 words) [view diff] exact match in snippet view article find links to article

semiconductor, EF, and the redox energy of electrolyte, Eredox, a Schottky barrier is formed at the semiconductor/electrolyte interface. The vertical

Photochemical action plots (2,492 words) [view diff] no match in snippet view article find links to article

"Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky-barrier cells". Journal of Applied Physics. 45 (1): 230–236. Bibcode:1974JAP

RF chain (6,651 words) [view diff] no match in snippet view article find links to article

McGraw-Hill 1962,1980, p.363 Bayliss R., " Microwave Diodes...Why Schottky-barrier? Why point-contact?", Microwaves and RF, Sept. 2013 " The Microwave