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searching for Phase-change memory 10 found (49 total)

Chalcogenide chemical vapour deposition (707 words) [view diff] no match in snippet view article find links to article

Kim (2006). "Highly reliable ring-type contact for high-density phase change memory". Japanese Journal of Applied Physics. 45 (4B): 3233–3237. Bibcode:2006JaJAP

Antimony(III) sulfate (402 words) [view diff] no match in snippet view article

manufacturing a storage node using the same, and method of manufacturing phase change memory device using the same – Samsung Electronics Co., Ltd. Freepatentsonline

Thomas Ranken Lyle Medal (998 words) [view diff] no match in snippet view article find links to article

microelectronics industry for manufacturing computer chips. He has developed phase change memory technology based on silicon which is expected to play an important

Hydrogen chalcogenide (1,856 words) [view diff] no match in snippet view article find links to article

497 Xiao, M. & Gaffney, T. R. Tellurium (Te) Precursors for Making Phase Change Memory Materials. (Google Patents, 2013) (https://www.google.ch/patents/US20130129603)

Gillian Reid (1,066 words) [view diff] no match in snippet view article find links to article

electrodeposition of functional semiconducting metal chalcogenides Ge2 Sb2 Te5 phase change memory". Materials Horizons. 2 (4): 420–426. doi:10.1039/C5MH00030K. "Novel

Austen Angell (1,260 words) [view diff] exact match in snippet view article find links to article

anomalies may play a role in the functionalities of nonvolatile phase-change memory devices. He was a Regents Professor—the highest faculty honor awarded—at

Interatomic potential (7,360 words) [view diff] case mismatch in snippet view article find links to article

; Csányi, Gábor; Elliott, Stephen R. (2018-09-27). "Modeling the Phase-Change Memory Material, Ge 2 Sb 2 Te 5 , with a Machine-Learned Interatomic Potential"

2011 in science (20,978 words) [view diff] exact match in snippet view article find links to article

the University of California is developing a first-of-its kind, phase-change memory solid-state storage device that provides performance thousands of

Hyperdimensional computing (1,730 words) [view diff] exact match in snippet view article find links to article

with peripheral digital CMOS circuits. Experiments using 760,000 phase-change memory devices performing analog in-memory computing achieved accuracy comparable

Machine-learned interatomic potential (1,205 words) [view diff] case mismatch in snippet view article find links to article

; Csányi, Gábor; Elliott, Stephen R. (2018-09-27). "Modeling the Phase-Change Memory Material, Ge 2 Sb 2 Te 5, with a Machine-Learned Interatomic Potential"