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searching for Electron mobility 71 found (165 total)

alternate case: electron mobility

Aluminium gallium nitride (282 words) [view diff] no match in snippet view article find links to article

used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors. AlGaN is often used together with gallium nitride or
Monolithic microwave integrated circuit (430 words) [view diff] no match in snippet view article find links to article
field-effect transistors (MESFETs) as the active device. More recently high-electron-mobility transistor (HEMTs), pseudomorphic HEMTs and heterojunction bipolar
Spin gapless semiconductor (555 words) [view diff] exact match in snippet view article find links to article
major category of SGS are parabolic spin gapless semiconductors. Electron mobility in such materials is two to four orders of magnitude higher than in
Satoshi Hiyamizu (253 words) [view diff] exact match in snippet view article find links to article
IEEE Fellow "for contributions to the realization of the first high electron mobility transistor (HEMT)". He served as dean of the Osaka University Graduate
Kei May Lau (255 words) [view diff] no match in snippet view article find links to article
a semiconductor engineer whose research topics have included high-electron-mobility transistors, light-emitting diodes, and laser diodes. She is Fang
Indium aluminium nitride (572 words) [view diff] no match in snippet view article find links to article
particular interest to areas such as the space industry. InAlN high-electron-mobility transistors (HEMTs) are attractive candidates for such applications
Graphene plasmonics (1,257 words) [view diff] exact match in snippet view article find links to article
counterparts. The most prominent advantages are known to be their high electron mobility and high mechanical strengths. Thus, it exhibits potential for applications
April Brown (563 words) [view diff] no match in snippet view article find links to article
nanoscale droplets. She is also known for her work on the design of high-electron-mobility transistors and on nanoscale fabrication using molecular-beam epitaxy
Oxide thin-film transistor (967 words) [view diff] exact match in snippet view article find links to article
the electron mobility is roughly 100 times higher in oxide TFTs. Because the source-drain current in transistors is linearly proportional to electron mobility
MESFET (446 words) [view diff] exact match in snippet view article find links to article
output stage of microwave links, and as a power oscillator. High electron mobility transistor (HEMT) Heterojunction bipolar transistor Lepkowski, W.;
Hybrid solar cell (4,412 words) [view diff] exact match in snippet view article find links to article
electron transfer from the CdSe to the polymer. CdSe also has a high electron mobility (600 cm2·V−1·s−1). The highest demonstrated efficiency is 3.2%, based
6G (network) (1,339 words) [view diff] no match in snippet view article
aspects of the device, including an "n-polar" gallium nitride high-electron-mobility transistor (HEMT), in two papers which were published in IEEE Electron
Heterojunction bipolar transistor (745 words) [view diff] exact match in snippet view article find links to article
such as analog-to-digital and digital-to-analog converters. High electron mobility transistor (HEMT) MESFET W. Shockley: 'Circuit Element Utilizing Semiconductive
Heterojunction bipolar transistor (745 words) [view diff] exact match in snippet view article find links to article
such as analog-to-digital and digital-to-analog converters. High electron mobility transistor (HEMT) MESFET W. Shockley: 'Circuit Element Utilizing Semiconductive
Stanley Shanfield (962 words) [view diff] exact match in snippet view article find links to article
Laboratory Manager, overseeing the invention of a pseudomorphic high electron mobility transistor. In 1996 he became Manager, Semiconductor Operations, a
Low-noise amplifier (1,056 words) [view diff] no match in snippet view article find links to article
stage. Therefore, junction field-effect transistors (JFETs) and high-electron-mobility transistor (HEMTs) are often used. They are driven in a high-current
IQE (696 words) [view diff] exact match in snippet view article find links to article
specialised in a number of wireless products including pseudomorphic high electron mobility transistors (pHEMTs) and metal semiconductor field-effect transistors(MESFETs)
Gallium(III) oxide (1,485 words) [view diff] exact match in snippet view article
Nikos; Patsalas, Panos A.; Anthopoulos, Thomas D. (2014). "High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic
Field-effect transistor (5,624 words) [view diff] no match in snippet view article find links to article
The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping
Molecular-beam epitaxy (1,479 words) [view diff] no match in snippet view article find links to article
Metalorganic vapour phase epitaxy Colin P. Flynn Arthur Gossard High-electron-mobility transistor (HEMT) Heterojunction bipolar transistor Herbert Kroemer
Electronic component (2,627 words) [view diff] no match in snippet view article find links to article
induction transistor) MESFET (metal semiconductor FET) HEMT (high-electron-mobility transistor) Composite transistors BiCMOS (bipolar CMOS) IGBT (Insulated-gate
Mean free path (2,278 words) [view diff] exact match in snippet view article find links to article
scattering much more noticeable, effectively increasing the resistivity. Electron mobility through a medium with dimensions smaller than the mean free path of
Joule heating (2,346 words) [view diff] case mismatch in snippet view article find links to article
Retrieved 16 September 2016. "Drift Velocity, Drift Current and Electron Mobility". Electrical4U. Retrieved 26 July 2017. Electric power systems: a
Bradbury–Nielsen shutter (523 words) [view diff] case mismatch in snippet view article find links to article
Norris E. Bradbury & Russel A. Nielsen (1936). "Absolute Values of the Electron Mobility in Hydrogen". Physical Review. 49 (5): 388–93. Bibcode:1936PhRv..
Christopher Snowden (3,505 words) [view diff] exact match in snippet view article find links to article
volume manufacturing. Snowden went on to apply this technique to high electron mobility transistors (HEMTs), between 1995 and 2005 utilizing highly effective
Transparent conducting film (4,437 words) [view diff] exact match in snippet view article find links to article
dopants in indium oxide, particularly molybdenum, give much higher electron mobility and conductivity than obtained with tin and Ta is a promising alternative
Electronic oscillator (3,295 words) [view diff] exact match in snippet view article find links to article
Gunn diode, fundamental mode ~100 GHz Magnetron tube ~100 GHz High electron mobility transistor (HEMT) ~200 GHz Klystron tube ~200 GHz Gunn diode, harmonic
Semiconductor package (1,437 words) [view diff] case mismatch in snippet view article find links to article
Keyan Bennaceur, Nature.com. “Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.” September 22, 2015. April 23, 2015. Michael Pecht (ed) Integrated
Cadmium telluride (1,702 words) [view diff] exact match in snippet view article find links to article
and x-ray detectors are high atomic number, large bandgap and high electron mobility ~1100 cm2/V·s, which result in high intrinsic μτ (mobility-lifetime)
Organic solar cell (12,011 words) [view diff] exact match in snippet view article find links to article
distribution on P3HT:PCBM solar cells was shown to cause problems with electron mobility which ends up with the yielding of very poor device efficiencies.
Degree Angular Scale Interferometer (2,073 words) [view diff] no match in snippet view article find links to article
crosstalk between the antennae. Each of the telescopes had a high-electron-mobility transistor (HEMT) amplifier working at the frequencies 26–36 GHz (Ka
Ingvild Julie Thue Jensen (337 words) [view diff] no match in snippet view article find links to article
two-dimensional electron gas devices (GO2DEVICE)", fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures
Distributed amplifier (1,519 words) [view diff] exact match in snippet view article find links to article
have superior performance resulting from higher bandgaps (higher electron mobility), higher saturated electron velocity, higher breakdown voltages and
Platinum diselenide (1,476 words) [view diff] no match in snippet view article find links to article
Zheng; Wang, Xinran; Ji, Wei; Chai, Yang (February 2017). "High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs". Advanced Materials. 29 (5):
Diffusion current (1,402 words) [view diff] exact match in snippet view article find links to article
number density), q is the magnitude of charge of an electron, μ is electron mobility in the medium, and E = −dΦ/dx (Φ potential difference) is the electric
High-field domain (1,820 words) [view diff] exact match in snippet view article find links to article
measure the electron density in the field quenched branch and of the electron mobility as a function of the temperature The high-field domain is determined
Fermi level (3,156 words) [view diff] no match in snippet view article find links to article
Example of variations in conduction band edge EC in a band diagram of GaAs/AlGaAs heterojunction-based high-electron-mobility transistor.
Schottky barrier (2,266 words) [view diff] no match in snippet view article find links to article
provides the depletion region). A variant of this device is the high-electron-mobility transistor (HEMT), which also utilizes a heterojunction to provide
Norris Bradbury (2,742 words) [view diff] case mismatch in snippet view article find links to article
E. Bradbury and Russel A. Nielsen (1936). "Absolute Values of the Electron Mobility in Hydrogen". Physical Review. 49 (5): 388–93. Bibcode:1936PhRv..
Materials science (5,338 words) [view diff] exact match in snippet view article find links to article
is the second most popular semiconductor used. Due to its higher electron mobility and saturation velocity compared to silicon, it is a material of choice
Newton Aycliffe (2,788 words) [view diff] exact match in snippet view article find links to article
business to RFMD in 2007. The plant uses pHEMT technologies (High electron mobility transistor), using Gallium arsenide (GaAs) and Gallium nitride (GaN)
Alec Broers, Baron Broers (2,352 words) [view diff] exact match in snippet view article find links to article
Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down
Kyoto Prize in Advanced Technology (543 words) [view diff] case mismatch in snippet view article find links to article
Miniaturization 2017 Takashi Mimura [de]  Japan born 1944 Invention of the High Electron Mobility Transistor (HEMT) and Its Development for the Progress of Information
Scanning joule expansion microscopy (2,760 words) [view diff] exact match in snippet view article find links to article
Possible materials and devices for thermal mapping include high electron mobility transistors, nanotubes, nanowires, graphene sheets, nanomeshes, and
Moore's law (10,921 words) [view diff] exact match in snippet view article find links to article
50 nm graphene layers, as its resistivity value increases and thus electron mobility decreases. In April 2005, Gordon Moore stated in an interview that
Cathy Foley (1,027 words) [view diff] exact match in snippet view article find links to article
1063/1.336906. ISSN 0021-8979. Tansley, T.L.; Foley, C.P. (1984). "Electron mobility in indium nitride". Electronics Letters. Institution of Engineering
Silver (11,208 words) [view diff] exact match in snippet view article find links to article
interactions (which occur in the preceding transition metals) lower electron mobility. The thermal conductivity of silver is among the highest of all materials
Indium tin oxide (3,998 words) [view diff] exact match in snippet view article find links to article
dopants in indium oxide, particularly molybdenum, give much higher electron mobility and conductivity than obtained with tin. Doped binary compounds such
Planck (spacecraft) (2,934 words) [view diff] no match in snippet view article
infrared regions of the electromagnetic spectrum. The detectors use high-electron-mobility transistors. The HFI was sensitive between 100 and 857 GHz, using
Danielle George (1,542 words) [view diff] no match in snippet view article find links to article
Millimetre-wave radiometer development and characterisation Low noise high-electron-mobility transistor (HEMT) parameter extraction and modelling Cryogenic low-noise
Sankar Das Sarma (1,505 words) [view diff] exact match in snippet view article find links to article
structure calculation of semiconductor heterojunction-based high electron mobility transistor structures, electron-phonon interaction induced polaron
Terahertz radiation (5,139 words) [view diff] no match in snippet view article find links to article
Far-infrared laser Full body scanner Heterojunction bipolar transistor High-electron-mobility transistor (HEMT) Picarin Terahertz time-domain spectroscopy Jones
Optical modulators using semiconductor nano-structures (1,361 words) [view diff] exact match in snippet view article find links to article
structure is based on the well-established technology for producing high electron mobility transistors where an electron gas is confined at a GaAs/AlxGa1 xAs
Geometric diode (1,681 words) [view diff] exact match in snippet view article find links to article
Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. (2008-06-01). "Ultrahigh electron mobility in suspended graphene". Solid State Communications. 146 (9): 351–355
Graphene nanoribbon (4,555 words) [view diff] exact match in snippet view article find links to article
had perfectly smooth edges, annealed by the fabrication process. Electron mobility measurements surpassing one million correspond to a sheet resistance
Quantum well (6,203 words) [view diff] exact match in snippet view article find links to article
transmitters, or in blue lasers. They are also used to make HEMTs (high electron mobility transistors), which are used in low-noise electronics. Quantum well
Single-layer materials (4,837 words) [view diff] exact match in snippet view article find links to article
particular it possesses a nonzero band gap while displaying high electron mobility. This property potentially makes it a better semiconductor than graphene
Alkali metal (22,757 words) [view diff] exact match in snippet view article find links to article
between s electrons and the partially filled d subshell that lower electron mobility." Chemically, the group 11 metals behave like main-group metals in
Electronics and semiconductor manufacturing industry in India (6,411 words) [view diff] case mismatch in snippet view article find links to article
semiconductor foundry and fab because of their wide ranged use like High Electron Mobility Transistor (HEMT) made from GaN in power electronics both for civilian
Bruno Rossi (10,724 words) [view diff] exact match in snippet view article find links to article
very brief. With James S. Allen, Rossi found gas mixtures of high electron mobility and low electron attachment. On the basis of these investigations
Metals close to the border between metals and nonmetals (14,780 words) [view diff] exact match in snippet view article find links to article
between s electrons and the partially filled d subshell that lower electron mobility." Chemically, the group 11 metals in their +1 valence states show
Aristos Christou (1,579 words) [view diff] exact match in snippet view article find links to article
electronics performance. His contributions also included vertical high electron mobility transistors based on nitride semiconductors utilizing the AlGaN/GaN
Polymer-fullerene bulk heterojunction solar cells (1,086 words) [view diff] exact match in snippet view article find links to article
molecule with a strong affinity for electrons, ensuring sufficient electron mobility between the two. The arrangement of materials essentially determines
Graphene spray gun (1,242 words) [view diff] exact match in snippet view article find links to article
graphene's distinctive properties, such as its high strength, high electron mobility, mechanical stiffness, and its ability to conduct both electricity
Indenofluorene (2,561 words) [view diff] exact match in snippet view article find links to article
lead to a herringbone crystal packing which is not favorable for electron mobility through the crystal. Similar to indeno [1,2 -b] fluorenes, see above
CfA 1.2 m Millimeter-Wave Telescope (3,757 words) [view diff] exact match in snippet view article find links to article
frequency (IF) signal that is further amplified with a low-noise high electron mobility field effect transistor (HEMT FET) amplifier, and passed to the IF
Heat transfer physics (9,865 words) [view diff] exact match in snippet view article find links to article
transport (represented as σe) is a function of carrier density ne,c and electron mobility μe (σe = ecne,cμe). μe is determined by electron scattering rates
Potential applications of graphene (14,367 words) [view diff] exact match in snippet view article find links to article
that confines light and alters wavelengths. Due to extremely high electron mobility, graphene may be used for production of highly sensitive Hall effect
Contorted aromatics (6,149 words) [view diff] exact match in snippet view article find links to article
donor and acceptors. The c-PDI dimers on the other hand show better electron mobility (~10−2 cm2 V−1 s−1), electron acceptability and almost similar LUMO
Graphene production techniques (10,104 words) [view diff] exact match in snippet view article find links to article
exfoliation produced graphene with the lowest number of defects and highest electron mobility. Andre Geim and Konstantin Novoselov initially used adhesive tape
List of fellows of IEEE Electron Devices Society (57 words) [view diff] exact match in snippet view article find links to article
silicon devices 2005 Phillip Smith For contributions to microwave high electron mobility transistors 2005 Juzer Vasi For leadership in microelectronics education