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searching for MOSFET 23 found (1744 total)

alternate case: mOSFET

Avalanche breakdown (499 words) [view diff] exact match in snippet view article find links to article

doi:10.1103/PhysRev.94.877. Power MOSFET avalanche characteristics and ratings - ST Application Note AN2344 Power MOSFET Avalanche Design Guidelines - Vishay

Non-volatile random-access memory (2,392 words) [view diff] exact match in snippet view article find links to article

huge advance in NVRAM technology was the introduction of the floating-gate MOSFET transistor, which led to the introduction of erasable programmable read-only

Transmission gate (907 words) [view diff] exact match in snippet view article find links to article

internally to the source terminal. The two transistors, an n-channel MOSFET and a p-channel MOSFET, are connected in parallel with the drain and source terminals

Active rectification (817 words) [view diff] exact match in snippet view article find links to article

rectification by replacing diodes with actively controlled switches, usually power MOSFETs or power bipolar junction transistors (BJT). Whereas normal semiconductor

Tunnel injection (105 words) [view diff] exact match in snippet view article find links to article

creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB

Precision rectifier (605 words) [view diff] exact match in snippet view article find links to article

op-amp-based precision rectifier should not be confused with the power MOSFET-based active rectification ideal diode. The basic circuit implementing such

Simon Sze (522 words) [view diff] exact match in snippet view article find links to article

Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Simon Min Sze was born

Multi-level cell (2,298 words) [view diff] exact match in snippet view article find links to article

single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required to store the

Alex Lidow (658 words) [view diff] exact match in snippet view article find links to article

CEO of International Rectifier and is the co-inventor of the HEXFET power MOSFET, a power transistor. Lidow is co-author of the book GaN Transistors for

Common source (1,368 words) [view diff] exact match in snippet view article find links to article

input capacitance and lowering the overall bandwidth. Figure 3 shows a MOSFET common-source amplifier with an active load. Figure 4 shows the corresponding

Quite Universal Circuit Simulator (801 words) [view diff] exact match in snippet view article find links to article

MESFET (Curtice, Statz, TOM-1 and TOM-2) SGP (SPICE Gummel-Poon) MOSFET JFET EPFL-EKV MOSFET v2.6. Qucs-S is a fork of Qucs that supports the SPICE-compatible

Roland Bolt amplifier (153 words) [view diff] case mismatch in snippet view article find links to article

was released in 1979. The Bolt amplifiers used an hybrid circuit, with a Mosfet based solid state preamp section and an all Tube power amp. The power amp

Gallium nitride (3,703 words) [view diff] exact match in snippet view article find links to article

transistors were available. These devices were designed to replace power MOSFETs in applications where switching speed or power conversion efficiency is

Fe FET (689 words) [view diff] exact match in snippet view article find links to article

FeFET or MFSFET. Its structure was like that of a modern inversion channel MOSFET, but ferroelectric material was used as a dielectric/insulator instead of

Jeffrey Bokor (247 words) [view diff] exact match in snippet view article find links to article

photoemission, and contributions to extreme ultraviolet lithography and sub-micron MOSFET device development." The IEEE awarded him an equivalent honor in 2000, acknowledging

Wilson current mirror (6,240 words) [view diff] exact match in snippet view article find links to article

equal because there is no low frequency or DC current into the gate of a MOSFET. However, there are always mismatches between transistors caused by random

EVGA Corporation (1,501 words) [view diff] exact match in snippet view article find links to article

was traced via X-ray analysis to poor workmanship on soldering around the MOSFET circuits. The company said they would replace all affected cards under warranty

Burst noise (445 words) [view diff] exact match in snippet view article find links to article

Noise in Semiconductor Devices and Modeling of Noise in Surrounding Gate MOSFET)" (PDF). Archived from the original (PDF) on April 14, 2006. "Operational

Tribotronics (1,045 words) [view diff] exact match in snippet view article find links to article

field-effect transistor (MOSFET) without top-gate electrode and a mobile layer is analyzed. Different from the conventional MOSFET, the externally applied

Standard Radio & Telefon AB (453 words) [view diff] exact match in snippet view article find links to article

SSA 1000 - 1000W Solid State Power Amplifier SSA 1020 - 1000W Solid State MOSFET Power Amplifier ATM 1000 - Automatic Antenna Coupler BBD-367 - HF Broadband

Transistor model (1,523 words) [view diff] case mismatch in snippet view article find links to article

Schneider (2007). Mosfet Modeling for Circuit Analysis And Design. World Scientific. ISBN 978-981-256-810-6. Narain Arora (2007). Mosfet Modeling for VLSI

Transistor model (1,523 words) [view diff] case mismatch in snippet view article find links to article

Schneider (2007). Mosfet Modeling for Circuit Analysis And Design. World Scientific. ISBN 978-981-256-810-6. Narain Arora (2007). Mosfet Modeling for VLSI

2023 in Taiwan (1,512 words) [view diff] exact match in snippet view article find links to article

– Simon Sze, 87, Taiwanese–American electrical engineer (Floating-gate MOSFET). 18 November Loïc Hsiao [zh], 58, Taiwanese cartoonist, theater director